Effects of time-dependent substrate biasing and gas composition on the nucleation of cubic boron nitride thin films

Diamond and Related Materials

Volumn 19, Issue 11, 2010, Pages 1366-1370

  Nose, K ^a,b   Yang, H S ^a,c   Kambara, M ^a   Yoshida, T ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^c ZHEJIANG UNIVERSITY   (China)

Author keywords

Chemical vapor deposition; Dielectric substrate; Inductively coupled plasma; Ion bombardment; Potential drop; Self bias

Indexed keywords

BIAS REDUCTION; BN FILMS; BORON NITRIDE THIN FILMS; CHEMICAL COMPOSITIONS; DC BIAS; DIBORANE; DIELECTRIC SUBSTRATES; GAS COMPOSITIONS; GAS RATIO; INDUCTIVELY COUPLED PLASMA CHEMICAL VAPOR DEPOSITION; INDUCTIVELY-COUPLED; NON-STOICHIOMETRY; POTENTIAL DROP; SAPPHIRE SUBSTRATES; SELF-BIAS; SUBSTRATE BIASING; TIME-DEPENDENT; TURBOSTRATIC;

BORON; BORON NITRIDE; CHEMICAL VAPOR DEPOSITION; DEPOSITION; DIELECTRIC MATERIALS; DROPS; ELECTROMAGNETIC INDUCTION; INDUCTIVELY COUPLED PLASMA; ION BOMBARDMENT; IONS; NITRIDES; NITROGEN; NUCLEATION; PLASMA DEPOSITION; SAPPHIRE; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS;

SUBSTRATES;

EID: 77957340879     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2010.07.006     Document Type: Article

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