The origins of self-bias on dielectric substrates in RF plasma processing

Surface and Coatings Technology

Volumn 200, Issue 12-13, 2006, Pages 3670-3674

  Yin, Y ^a   Bilek, M M M ^a   McKenzie, D R ^a  

^a UNIVERSITY OF SYDNEY   (Australia)

Author keywords

Dielectric substrate; RF plasma; Selfbias

Indexed keywords

DEPOSITION; ELECTRODES; ELECTRONS; ETCHING; PLASMA APPLICATIONS; PLASMA DENSITY; SUBSTRATES; TEMPERATURE; THIN FILMS;

DIELECTRIC SUBSTRATE; RF PLASMA; SELFBIAS;

DIELECTRIC MATERIALS;

DEPOSITION; DIELECTRIC MATERIALS; ELECTRODES; ELECTRONS; ETCHING; PLASMA APPLICATIONS; PLASMA DENSITY; SUBSTRATES; TEMPERATURE; THIN FILMS;

EID: 32644458762     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2004.09.015     Document Type: Article

References (6)

1. C. Charles R.W. Boswell R.K. Porteous J. Vac. Sci. Technol., A, Vac. Surf. Films 13 1995 2067
2. A. Howling A. Belinger P. Bulkin L. Delaunay M. Elyaakoubi Ch. Hollenstein J. Perrin L. Sansonnens J. Schmitt E. Turlot Mechanism of Substrate Charging After Plasma Processing 15th International Symposium on Plasma Chemistry (Orleans, France, July 9-13, 2001) vol. 1 2001 33
3. J. Kim Y. Shin K. Chung Thin Solid Films 435 288 2003
4. C. Charles R.W. Boswell M. Lieberman Phys. Plasmas, V 10 891 2003
5. M. Lieberman A. Lichtenberg Principles of Plasma Discharges and Materials Processing 1994 John Wiley and Sons New York
6. L. Sansonnens A. Howling Ch. Hollenstein J. Perrin J.P. Schmitt E. Turlot Proceedings of the 3rd International Conference on Reactive Plasmas and 14th Symposium on Plasma Processing 1997 Nara Japan 309