Growth mechanism for epitaxial cubic boron nitride films on diamond substrates by ion beam assisted deposition

Diamond and Related Materials

Volumn 13, Issue 4-8, 2004, Pages 1144-1148

  Zhang, X W ^a   Boyen, H G ^a   Ziemann, P ^a   Ozawa, M ^a   Banhart, F ^a   Schreck, M ^b  

^a UNIVERSITY OF ULM   (Germany)

^b UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

Cubic boron nitride; Heteroepitaxy; Ion assisted deposition; Surface characterization

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIAMONDS; EPITAXIAL GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GRAPHITIZATION; GROWTH KINETICS; ION BEAM ASSISTED DEPOSITION; ION BOMBARDMENT; LOW ENERGY ELECTRON DIFFRACTION; NUCLEATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

GROWTH MECHANISMS; PLASMON ENERGIES;

CUBIC BORON NITRIDE;

DIAMOND;

EID: 2442495119     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2003.11.042     Document Type: Article

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