Effectiveness of nitridation of hafnium silicate dielectrics: A comparison between thermal and plasma nitridation

IEEE Transactions on Electron Devices

Volumn 54, Issue 7, 2007, Pages 1771-1775

  O'Sullivan, Barry J ^a   Kaushik, Vidya S ^a,b   Everaert, J L ^a   Trojman, Lionel ^a,c   Ragnarsson, Lars Åke ^a   Pantisano, Luigi ^a   Rohr, Erika ^a   DeGendt, Stefan ^a,d   Heyns, Marc ^a,c  

^a IMEC   (Belgium)

^b FREESCALE SEMICONDUCTOR INC   (United States)

^c Katholieke Universiteit Leuven   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Drive current; Hafnium silicate; High ; Leakage current; Mobility; NH3 nitridation; Nitridation; Phase separation; Plasma nitridation

Indexed keywords

DRIVE CURRENT; HAFNIUM SILICATE DIELECTRICS; PLASMA NITRIDATION; THERMAL NITRIDATION;

CARRIER MOBILITY; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; NITRIDATION; PHASE SEPARATION; SILICA; SILICON WAFERS; TEMPERATURE;

DIELECTRIC MATERIALS;

EID: 34447550631     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.898460     Document Type: Article

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