Effects of film stress modulation using TiN metal gate on stress engineering and its impact on device characteristics in metal gate/ high-κ dielectric SOI FinFETs

IEEE Electron Device Letters

Volumn 29, Issue 5, 2008, Pages 487-490

  Kang, Chang Yong ^a   Yang, Ji Woon ^a   Oh, Jungwoo ^a   Choi, Rino ^b   Suh, Young Jun ^c   Floresca, H C ^c   Kim, Jiyoung ^c   Kim, Moon ^c   Lee, Byoung Hun ^a   Tseng, Hsing Huang ^a   Jammy, Raj ^a,d  

^a Semiconductor Manufacturing Technology   (United States)

^b Inha University   (South Korea)

^c The University of Texas at Dallas   (United States)

^d IBM   (United States)

Author keywords

High dielectric; Metal induced strain; Silicon on insulator (SOI) fin shaped field effect transistors (FinFETs)

Indexed keywords

DIELECTRIC MATERIALS; ELECTRON DIFFRACTION; MOSFET DEVICES; TENSILE STRESS; THRESHOLD VOLTAGE;

FIN-SHAPED FIELD-EFFECT TRANSISTORS; METAL-INDUCED STRAIN;

SILICON ON INSULATOR TECHNOLOGY;

EID: 43549102205     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.919782     Document Type: Article

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