Voltage-controlled multiple-valued logic design using negative differential resistance devices

Solid-State Electronics

Volumn 54, Issue 12, 2010, Pages 1637-1640

  Gan, Kwang Jow ^a   Tsai, Cher Shiung ^b   Chen, Yan Wun ^b   Yeh, Wen Kuan ^c  

^a NATIONAL CHIAYI UNIVERSITY   (Taiwan)

^b KUN SHAN UNIVERSITY   (Taiwan)

^c NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

Author keywords

BiCMOS technique; HBT; MOS; Multiple valued logic; Negative differential resistance circuit

Indexed keywords

BI-CMOS; HBT; MOS; MULTIPLE VALUED LOGIC; NEGATIVE DIFFERENTIAL RESISTANCES;

BIPOLAR TRANSISTORS; ELECTRIC CONVERTERS; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; LOGIC DESIGN; MANY VALUED LOGICS; MOS DEVICES; NEGATIVE RESISTANCE; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

LOGIC CIRCUITS;

EID: 77957298821     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.08.007     Document Type: Article

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