Three-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley current ratios using a monolithic vertical integration

Applied Physics Letters

Volumn 84, Issue 14, 2004, Pages 2688-2690

  Chung, Sung Yong ^a   Jin, Niu ^a   Berger, Paul R ^a,b   Yu, Ronghua ^b   Thompson, Phillip E ^c   Lake, Roger ^d   Rommel, Sean L ^e   Kurinec, Santosh K ^e  

^a Ohio State University   (United States)

^b OHIO STATE UNIVERSITY   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

^e ROCHESTER INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS); PEAK CURRENT DENSITY (PCD); PEAK-TO-VALLEY CURRENT RATIO (PVCR); RESONANT INTERBAND TUNNEL DIODES (RITD);

ANALOG TO DIGITAL CONVERSION; CURRENT DENSITY; ELECTRON MOBILITY; HETEROJUNCTION BIPOLAR TRANSISTORS; MICROWAVE INTEGRATED CIRCUITS; SILICON; SUBSTRATES; THERMAL EFFECTS; TUNNEL DIODES;

LIGHT EMITTING DIODES;

EID: 2342620672     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1690109     Document Type: Article

References (11)

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