From DRAM to SRAM with a novel SiGe-based negative differential resistance (NDR) device

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 959-962

  Yue, Liang ^a   Gopalakrishnan, Kailash ^a,b   Griffin, Peter B ^a   Plummer, James D ^a  

^a Stanford University   (United States)

^b IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NEGATIVE DIFFERENTIAL RESISTANCE (NDR) DEVICES; PEAK CURRENTS; SIGE GATED DIODES;

CMOS INTEGRATED CIRCUITS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC RESISTANCE; GATES (TRANSISTOR); SILICON COMPOUNDS; STATIC RANDOM ACCESS STORAGE;

SEMICONDUCTOR DIODES;

EID: 33847723792     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. B.M.Wilamowski, Elec. Device Lett., Vol. 11, No. 10, pp. 451, 1990.
2. J.P.A.Van Der Wagt, Proc. IEEE, Vol.87, No.4, pp. 571, 1999.
3. L. Esaki, IEEE Trans. Electron Devices, Vol. ED-23, pp. 644, 1976.
4. J. Koga and A. Toriumi, IEEE Electron Device Lett., vol. 20, pp. 529, 1999.
5. S. J. Koester, K. Ismail, K. Y. Lee, and J. O. Chu, IEEE Electron Device Lett., vol. 18, pp. 432, 1997
6. J. Shen, G. Kramer, S. Tehrani, H. Goronkin, and R. Tsui, IEEE Electron Device Lett., vol. 16, pp. 178, 1995