Tunneling-based SRAM

Proceedings of the IEEE

Volumn 87, Issue 4, 1999, Pages 571-595

  Van Der Wagt, J P A ^a,b  

^a RAYTHEON COMPANY   (United States)

^b ROCKWELL SCIENCE CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; MANY VALUED LOGICS; SEMICONDUCTOR STORAGE; TUNNEL DIODES;

RESONANT TUNNELING DIODES; SILICON BISTABLE DEVICE; STATIC RANDOM ACCESS MEMORY;

RANDOM ACCESS STORAGE;

EID: 0033116185     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/5.752516     Document Type: Article

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201. J. P. A. van der Wagt (Member, IEEE) received the M.S. degree in applied physics in 1986 and in applied mathematics in 1988, both cum laude, from Twente University, Enschede, the Netherlands. He received the Ph.D. degree in applied physics from Stanford University, Stanford, CA, in 1994.
202. His doctoral research focused on the realtime detection of RHEED oscillations during MBE and fabrication and modeling of resonanttunneling diodes. He was at Texas Instruments,
203. Dallas, TX, from 1995 to 1998 as a Member of the Technical Staff engaged in the design and fabrication of quantum device circuits for ultrahighspeed analog-to-digital converters and low-power memory.' He helped develop an InP-based integrated heterojunction field-effect transistor and resonant-tunneling diode technology. He joined the Rockwell Science Center, Thousand Oaks, CA, in 1998, where he is involved in high-speed mixed-signal design. He has authored or coauthored more than 20 papers and holds two U.S. patents.