Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR

IEEE Electron Device Letters

Volumn 25, Issue 9, 2004, Pages 646-648

  Jin, Niu ^a   Chung, Sung Yong ^a   Heyns, Roux M ^a   Berger, Paul R ^a,b   Yu, Ronghua ^b   Thompson, Phillip E ^c   Rommel, Sean L ^d  

^a The Ohio State University   (United States)

^b OHIO STATE UNIVERSITY   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

^d ROCHESTER INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; LOGIC CIRCUITS; LOW TEMPERATURE PROPERTIES; MANY VALUED LOGICS; MOLECULAR BEAM EPITAXY; NEGATIVE RESISTANCE; RAPID THERMAL ANNEALING; RESONANT TUNNELING; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

MULTIVALUED LOGIC; NEGATIVE DIFFERENTIAL RESISTANCE; RESONANT INTERBAND TUNNELING DIODES; SILICON GERMANIUM; TRISTATE LOGIC;

TUNNEL DIODES;

EID: 4444341306     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.833845     Document Type: Article

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