Fabrication and application of MOS-HBT-NDR circuit using standard SiGe process

Electronics Letters

Volumn 43, Issue 9, 2007, Pages 516-517

  Gan, K J ^a   Tsai, C S ^a   Sun, W L ^a  

^a KUN SHAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INVERTERS; ELECTRIC RESISTANCE; FREQUENCY MODULATION; MICROFABRICATION; SEMICONDUCTING SILICON COMPOUNDS;

INVERTER DESIGNS; METAL-OXIDE-SEMICONDUCTOR (MOS); NEGATIVE DIFFERENTIAL RESISTANCE (NDR);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 34247575233     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20070039     Document Type: Article

References (6)

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5. Gan, K.J., Chen, Y.H., Tsai, C.S., and Su, L.X.: 'Four-valued memory circuit using three-peak MOS-NDR devices and circuits', Electron. Lett., 2006, 42, (9), pp. 21-22
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