Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation

Solid-State Electronics

Volumn 48, Issue 10-11 SPEC. ISS., 2004, Pages 1907-1910

  Sudirgo, S ^a   Nandgaonkar, R P ^a   Curanovic, B ^a   Hebding, J L ^a   Saxer, R L ^a   Islam, S S ^a   Hirschman, K D ^a   Rommel, S L ^a   Kurinec, S K ^a   Thompson, P E ^b   Jin, N ^c   Berger, P R ^c  

^a Kate Gleason College of Engineering   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRON TUNNELING; FIELD EFFECT TRANSISTORS; METALLIZING; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON COMPOUNDS; STATIC RANDOM ACCESS STORAGE; TUNNEL DIODES;

CIRCUIT DESIGN; LOW VOLTAGE; MONOSTABLE-BISTABLE TRANSITON LOGIC ELEMENT (MOBILE); RESONANT INTERBAND TUNNEL DIODES (RITD);

MICROELECTRONICS;

EID: 3142765641     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.05.034     Document Type: Conference Paper

References (12)

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