Logic synthesis and circuit modeling of a programmable logic gate based on controlled quenching of series-connected negative differential resistance devices

IEEE Journal of Solid-State Circuits

Volumn 38, Issue 2, 2003, Pages 312-318

  Chen, Kevin J ^a   Niu, Guofu ^b  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b AUBURN UNIVERSITY   (United States)

Author keywords

Controlled quenching; High electron mobility transistor (HEMT); Negative differential resistance (NDR); Programmable logic gate; Resonant tunneling diode

Indexed keywords

COMPUTER SIMULATION; HIGH ELECTRON MOBILITY TRANSISTORS; LOGIC GATES; RESONANT TUNNELING; SEMICONDUCTOR QUANTUM WELLS;

CONTROLLED QUENCHING;

PROGRAMMABLE LOGIC CONTROLLERS;

EID: 0037321217     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2002.807403     Document Type: Article

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