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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 28, Issue 4, 2010, Pages 763-768

Fabrication of nanowires with high aspect ratios utilized by dry etching with SF6: C4F8 and self-limiting thermal oxidation on Si substrate

(6) Park, Si Young a,d Di Giacomo, Sandro J a,e Anisha, R a Berger, Paul R a Thompson, Phillip E b Adesida, Ilesanmi c

a The Ohio State University (United States)

b NAVAL RESEARCH LABORATORY (United States)

c University of Illinois at Urbana Champaign (United States)

d Johns Hopkins University (United States)

e NORTHROP GRUMMAN CORPORATION (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ELECTROMAGNETIC INDUCTION; FLUORINE; INDUCTIVELY COUPLED PLASMA; NANOWIRES; OXIDATION; PLASMA ETCHING; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

A-THERMAL; CONTINUOUS PROCESSING; HIGH ASPECT RATIO; ICP-RIE; INDUCTIVELY COUPLED-PLASMA REACTIVE ION ETCHING; LITHOGRAPHIC DIMENSIONS; OXIDATION EFFECTS; OXIDE THICKNESS; PROCESSING TECHNIQUE; SI NANOWIRE; SI SUBSTRATES; SI-BASED; THERMAL OXIDATION; TOPDOWN; TRANSMISSION ELECTRON;

REACTIVE ION ETCHING;

EID: 77957226322 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3455498 Document Type: Conference Paper

Times cited : (13)

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