Preparation of TEM plane view sections on semiconductor device using the tripod-polisher and chemical etching

Journal of Electron Microscopy

Volumn 50, Issue 1, 2001, Pages 9-13

  Kato, N ^a   Maruyama, H ^a   Saka, H ^b  

^a ITES Co Ltd   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

Chemical etching; Failure analysis; Plane view sections; Titanium silicide; Transmission electron microscopy; Tripod polisher

Indexed keywords

CHEMICAL MECHANICAL POLISHING; ETCHING; POTASSIUM HYDROXIDE; SEMICONDUCTOR DEVICES; SILICIDES; TITANIUM;

A-PLANE; CHEMICAL ETCHING; PLANE VIEW SECTION; PREPARATION TECHNIQUE; SILICIDE LAYERS; SPECIFIC AREAS; THINNINGS; TITANIUM SILICIDE; TRIPOD POLISHING; TRIPOD-POLISHER;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 0035076646     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/jmicro/50.1.9     Document Type: Article

References (10)

1. In situ microsectioning and imaging of semiconductor devices using a scanning ion microscope
2. Preparation of TEM plane view sections on specified devices using the tripod polisher
3. Silicides and local interconnections for high-performance VLSI applications
4. Formation of silicide by rapid thermal annealing over polycrystalline silicon
5. Enhanced grain growth of phosphorous-doped polycrystalline silicon by titanium silicide formation
6. 2 thin films
7. A procedure for cross sectioning specific semiconductor devices for both SEM and TEM analysis
8. Recent developments in the use of the tripod polisher for TEM specimen preparation
9. Chemical etch formulations and history