Ge diffusion in strained Si / relaxed SiGe heterostructures

ECS Transactions

Volumn 3, Issue 7, 2006, Pages 1099-1108

  Bogumilowicz, Y ^a   Barnes, J P ^a   Holliger, P ^a   Rouchon, D ^a   Daval, N ^b   Hartmann, J M ^a   Abbadie, A ^b   Lallemand, F ^b   Guiot, E ^b   Akatsu, T ^b   Deguet, C ^a   Kernevez, N ^a  

^a CEA LETI   (France)

^b PARC TECHNOLOGIQUE DES FONTAINES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); DIFFUSION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; TENSILE STRENGTH;

DIFFUSION COEFFICIENTS; STRAIN LEVELS; THERMAL BUDGETS;

HETEROJUNCTIONS;

EID: 33846953601     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2355904     Document Type: Conference Paper

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