Low sidewall damage plasma etching using ICP-RIE with HBr chemistry of Si/SiGe resonant interband tunnel diodes

Electronics Letters

Volumn 42, Issue 12, 2006, Pages 719-721

  Park, S Y ^a   Chung, S Y ^a   Berger, P R ^a,b   Yu, R ^b   Thompson, P E ^c  

^a The Ohio State University   (United States)

^b OHIO STATE UNIVERSITY   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INDUCTIVELY COUPLED PLASMA; LEAKAGE CURRENTS; LIMITERS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REACTIVE ION ETCHING; SEMICONDUCTING SILICON; TUNNEL DIODES;

DRY PLASMA ETCHINGS; LOW SUBSTRATE BIAS POWER; PEAK-TO-VALLEY CURRENT RATIO (PVCR); RESONANT INTERBAND TUNNEL DIODES (RITD);

PLASMA ETCHING;

EID: 33745072491     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20060323     Document Type: Article

References (10)

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