Comparison of deep silicon etching using SF6 / C4 F8 and SF6 / C4 F6 plasmas in the Bosch process

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 2, 2008, Pages 576-581

  Rhee, Hyongmoo ^a   Kwon, Hyeokkyu ^a   Kim, Chang Koo ^a   Kim, Hyunjung ^a   Yoo, Jaisuk ^a   Kim, Yil Wook ^b  

^a Ajou University   (South Korea)

^b Eugentech Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC ETCHING; DEPOSITION; PLASMA ETCHING;

BOSCH PROCESS; FLUOROCARBON FILMS;

SILICON;

EID: 41549144359     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2884763     Document Type: Article

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