30 nm Tungsten gates etched by a low damage ICP etching for the fabrication of compound semiconductor transistors

Microelectronic Engineering

Volumn 83, Issue 4-9 SPEC. ISS., 2006, Pages 1152-1154

  Li, X ^a   Cao, X ^a   Zhou, H ^a   Wilkinson, C D W ^a   Thoms, S ^a   Macintyre, D ^a   Holland, M ^a   Thayne, I G ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Compound semiconductor device fabrication; HEMT; ICP, tungsten; Inductively coupled plasma etching

Indexed keywords

GATES (TRANSISTOR); INDUCTIVELY COUPLED PLASMA; MOLECULAR BEAM EPITAXY; PLASMA ETCHING; SEMICONDUCTOR DEVICE MANUFACTURE; TUNGSTEN;

COMPOUND SEMICONDUCTOR DEVICE FABRICATION; ICP, TUNGSTEN; INDUCTIVELY COUPLED PLASMA ETCHING; PLASMA-INDUCED DAMAGE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33646017428     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.01.073     Document Type: Article

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