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Volumn 312, Issue 21, 2010, Pages 3209-3213

Growth and optical properties of high-density InN nanodots

(11) Ke, W C a Lee, S J a Kao, C Y a Chen, W K b Chou, W C b Lee, M C b Chang, W H b Lin, W J c Cheng, Y C c Lee, T C c Lin, J C c

a YUAN ZE UNIVERSITY (Taiwan)

b NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

c CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY (Taiwan)

Author keywords

A1. Nanostructures; A3. Metalorganic chemical vapor deposition; B1. InN; B2. Semiconducting indium compounds

Indexed keywords

A1. NANOSTRUCTURES; A3.METALORGANIC CHEMICAL VAPOR DEPOSITION; B1. INN; B2. SEMICONDUCTING INDIUM COMPOUNDS; BLUE-SHIFTED; DIFFUSION ACTIVATION ENERGY; FERMI ENERGY; GROWTH SURFACES; HIGH DENSITY; METALORGANIC CHEMICAL VAPOR DEPOSITION; NANODOTS; PEAK ENERGY; PL INTENSITY; PULSED MODE; REACTIVE NITROGEN; TEMPERATURE DEPENDENCE; THERMAL ACTIVATION ENERGIES;

ACTIVATION ENERGY; ARRHENIUS PLOTS; CARRIER CONCENTRATION; ELECTRON MOBILITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURES; OPTICAL PROPERTIES; SEMICONDUCTING INDIUM; SEMICONDUCTOR GROWTH; VAPOR DEPOSITION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 77956873876 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.07.044 Document Type: Article

Times cited : (7)

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