Impacts of ammonia background flows on structural and photoluminescence properties of InN dots grown on GaN by flow-rate modulation epitaxy

Applied Physics Letters

Volumn 89, Issue 26, 2006, Pages

  Ke, W C ^a   Lee, L ^a   Chen, C Y ^a   Tsai, W C ^a   Chang, W H ^a   Chou, W C ^a   Lee, M C ^a   Chen, W K ^a   Lin, W J ^b   Cheng, Y C ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; GALLIUM NITRIDE; NUCLEATION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; VAPOR PHASE EPITAXY;

ADATOMS; EMISSION PROPERTIES; FLOW-RATE MODULATION EPITAXY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33846119711     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2425038     Document Type: Article

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