Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AIGaN quantum wells

Applied Physics Letters

Volumn 70, Issue 22, 1997, Pages 2993-2995

  Perlin, Piotr ^a,c   Iota, Valentin ^b   Weinstein, Bernard A ^b   Wiśniewski, Przemek ^c   Suski, Tadeusz ^c   Eliseev, Petr G ^a   Osiński, Marek ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b UNIVERSITY AT BUFFALO   (United States)

^c INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005914367     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118767     Document Type: Article

References (20)

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