Atomic ordering dependence on growth method in Ge:Si(001) islands: Influence of surface kinetic and thermodynamic interdiffusion mechanisms

Physical Review B - Condensed Matter and Materials Physics

Volumn 82, Issue 3, 2010, Pages

  Malachias, A ^a   Stoffel, M ^b,c   Schmidbauer, M ^d   Schulli, T U ^e   Medeiros Ribeiro, G ^f   Schmidt, O G ^c   Magalhães Paniago, Rogerio ^g   Metzger, T H ^e,h  

^a LABORATÓRIO NACIONAL DE LUZ SÍNCROTRON   (Brazil)

^b INSTITUT JEAN LAMOUR   (France)

^c IFW DRESDEN   (Germany)

^d LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^e EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^f HEWLETT PACKARD LABORATORIES   (United States)

^g FEDERAL UNIVERSITY OF MINAS GERAIS   (Brazil)

^h MAX PLANCK INSTITUTE OF COLLOIDS AND INTERFACES   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77956695418     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.82.035307     Document Type: Article

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