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Volumn 92, Issue 21, 2004, Pages

Critical role of surface steps in the alloying of Ge on Si(001)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYING; ATOMIC FORCE MICROSCOPY; BINDING ENERGY; DIMERS; ENTROPY; NUCLEATION; SILICON; SILICON COMPOUNDS; STRUCTURAL ANALYSIS; WAKES;

EID: 3142556201     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.92.216104     Document Type: Article
Times cited : (18)

References (19)
  • 9
    • 85032431168 scopus 로고    scopus 로고
    • note
    • The change in constrast occurs because the orientation of the 2 × 1 reconstruction is rotated by 90° at an atomic step.
  • 15
    • 85032429326 scopus 로고    scopus 로고
    • note
    • The loops will shrink very slowly, in a manner consistent with island coarsening. That is, they shrink to reduce the overall step length at the surface.
  • 16
    • 85032431359 scopus 로고    scopus 로고
    • note
    • This simple approximation, suggested to us by Tersoff, is motivated by first-principles calculations [7] that show that the barrier for Ge migration increases with depth.
  • 17
    • 85032427507 scopus 로고    scopus 로고
    • note
    • As in [7], we assume the Ge atoms are noninteracting. The free energy gain is not strongly dependent on the choice of L: for L = 2, Δγ = 15 meV/atom, whereas for L = 5, Δγ = 7 meV/atom.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.