SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 108, Issue 4, 2010, Pages

Analysis of the degradation induced by focused ion Ga3+ beam for the realization of piezoelectric nanostructures

(8) Remiens D a Liang, R H a Soyer, C b Deresmes, D b Troadec, D b Quignon, S b Da Costa, A c Desfeux, R c

a SHANGHAI INSTITUTE OF CERAMICS (China)

b OPTO+ (France)

c UNIVERSITÉ D'ARTOIS (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS STATE; CONDUCTING ATOMIC FORCE MICROSCOPY; CRYSTALLIZED FILMS; CRYSTALLIZED STRUCTURE; CURRENT VOLTAGE CURVE; ELECTROMECHANICAL ACTIVITY; ETCHED FILMS; ETCHING PROCESS; FIB ETCHING; ION DOSE; ISLAND SHAPE; KELVIN FORCE MICROSCOPY; LATERAL SIZES; PIEZOELECTRIC HYSTERESIS LOOPS; PIEZOELECTRIC SIGNALS; PIEZORESPONSE; PIEZORESPONSE FORCE MICROSCOPY; REFERENCE FILMS; SIZE EFFECTS;

ATOMIC FORCE MICROSCOPY; DEGRADATION; ELECTRON BEAMS; ETCHING; HYSTERESIS; HYSTERESIS LOOPS; ION IMPLANTATION; NANOSTRUCTURES; PIEZOELECTRICITY;

AMORPHOUS FILMS;

EID: 77956318483 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3474963 Document Type: Conference Paper

Times cited : (8)

References (26)

1
- 38749148503
- ISJEAZ 1530-437X,. 10.1109/JSEN.2007.913021
- C. Ayela, T. Aleva, D. Lagrange, D. Ŕmiens, C. Soyer, T. Ondarcuhu, A. Greve, and L. Nicu, IEEE Sens. J. ISJEAZ 1530-437X 8, 210 (2008). 10.1109/JSEN.2007.913021
- (2008) IEEE Sens. J. , vol.8 , pp. 210
- Ayela, C.¹ Aleva, T.² Lagrange, D.³ Ŕmiens, D.⁴ Soyer, C.⁵ Ondarcuhu, T.⁶ Greve, A.⁷ Nicu, L.⁸

2
- 36048944300
- APPLAB 0003-6951,. 10.1063/1.2753120
- J. Verd, A. Uranga, G. Abadal, J. Teva, F. Torres, F. Ṕrez-Murano, J. Fraxeda, J. Esteve, and N. Bardiol, Appl. Phys. Lett. APPLAB 0003-6951 91, 013501 (2007). 10.1063/1.2753120
- (2007) Appl. Phys. Lett. , vol.91 , pp. 013501
- Verd, J.¹ Uranga, A.² Abadal, G.³ Teva, J.⁴ Torres, F.⁵ Ṕrez-Murano, F.⁶ Fraxeda, J.⁷ Esteve, J.⁸ Bardiol, N.⁹

3
- 48449083960
- NALEFD 1530-6984,. 10.1021/nl801071w
- R. R. He, X. L. Feng, M. L. Roukes, and P. D. Yang, Nano Lett. NALEFD 1530-6984 8, 1756 (2008). 10.1021/nl801071w
- (2008) Nano Lett. , vol.8 , pp. 1756
- He, R.R.¹ Feng, X.L.² Roukes, M.L.³ Yang, P.D.⁴

4
- 0038543323
- NNOTER 0957-4484,. 10.1088/0957-4484/14/6/314
- Y. Cho, K. Fujimoto, Y. Hiranaga, Y. Wagatsuma, A. Onoe, K. Terabe, and K. Kitamura, Nanotechnology NNOTER 0957-4484 14, 637 (2003). 10.1088/0957-4484/14/6/314
- (2003) Nanotechnology , vol.14 , pp. 637
- Cho, Y.¹ Fujimoto, K.² Hiranaga, Y.³ Wagatsuma, Y.⁴ Onoe, A.⁵ Terabe, K.⁶ Kitamura, K.⁷

5
- 0032613316
- APPLAB 0003-6951,. 10.1063/1.124822
- M. Alexe, C. Harnagea, D. Hesse, and U. Gösele, Appl. Phys. Lett. APPLAB 0003-6951 75, 1793 (1999). 10.1063/1.124822
- (1999) Appl. Phys. Lett. , vol.75 , pp. 1793
- Alexe, M.¹ Harnagea, C.² Hesse, D.³ Gösele, U.⁴

6
- 0001453101
- APPLAB 0003-6951,. 10.1063/1.125485
- C. S. Ganpule, A. Stanshevsky, S. Aggarwal, J. Melngailis, E. Williams, R. Ramesh, V. Joshi, and C. Paz de Araujo, Appl. Phys. Lett. APPLAB 0003-6951 75, 3874 (1999). 10.1063/1.125485
- (1999) Appl. Phys. Lett. , vol.75 , pp. 3874
- Ganpule, C.S.¹ Stanshevsky, A.² Aggarwal, S.³ Melngailis, J.⁴ Williams, E.⁵ Ramesh, R.⁶ Joshi, V.⁷ Paz De Araujo, C.⁸

7
- 61449201339
- JAPIAU 0021-8979,. 10.1063/1.3073892
- R. H. Liang, D. Ŕmiens, D. Deresmes, C. Soyer, D. Troadec, X. L. Dong, L. H. Yang, R. Desfeux, A. Da Costa, and J. F. Blach, J. Appl. Phys. JAPIAU 0021-8979 105, 044101 (2009). 10.1063/1.3073892
- (2009) J. Appl. Phys. , vol.105 , pp. 044101
- Liang, R.H.¹ Ŕmiens, D.² Deresmes, D.³ Soyer, C.⁴ Troadec, D.⁵ Dong, X.L.⁶ Yang, L.H.⁷ Desfeux, R.⁸ Da Costa, A.⁹ Blach, J.F.¹⁰

8
- 0026944068
- JAPNDE 0021-4922,. 10.1143/JJAP.31.3533
- K. Saito and M. Kaise, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 31, 3533 (1992). 10.1143/JJAP.31.3533
- (1992) Jpn. J. Appl. Phys., Part 1 , vol.31 , pp. 3533
- Saito, K.¹ Kaise, M.²

9
- 0032621923
- APPLAB 0003-6951,. 10.1063/1.124628
- M. Alexe, A. Gruverman, C. Harnagea, N. D. Zakharov, A. Pignolet, D. Hesse, and J. F. Scott, Appl. Phys. Lett. APPLAB 0003-6951 75, 1158 (1999). 10.1063/1.124628
- (1999) Appl. Phys. Lett. , vol.75 , pp. 1158
- Alexe, M.¹ Gruverman, A.² Harnagea, C.³ Zakharov, N.D.⁴ Pignolet, A.⁵ Hesse, D.⁶ Scott, J.F.⁷

10
- 0001303923
- JAPIAU 0021-8979,. 10.1063/1.1331654
- S. Hong, J. Woo, H. Shin, J. U. Jeon, Y. E. Park, E. L. Colla, N. Setter, E. Kim, and K. No, J. Appl. Phys. JAPIAU 0021-8979 89, 1377 (2001). 10.1063/1.1331654
- (2001) J. Appl. Phys. , vol.89 , pp. 1377
- Hong, S.¹ Woo, J.² Shin, H.³ Jeon, J.U.⁴ Park, Y.E.⁵ Colla, E.L.⁶ Setter, N.⁷ Kim, E.⁸ No, K.⁹

11
- 0037474954
- APPLAB 0003-6951,. 10.1063/1.1565177
- A. L. Kholkin, V. V. Shvartsman, A. Y. Emelyanov, R. Poyato, M. L. Calzada, and L. Pardo, Appl. Phys. Lett. APPLAB 0003-6951 82, 2127 (2003). 10.1063/1.1565177
- (2003) Appl. Phys. Lett. , vol.82 , pp. 2127
- Kholkin, A.L.¹ Shvartsman, V.V.² Emelyanov, A.Y.³ Poyato, R.⁴ Calzada, M.L.⁵ Pardo, L.⁶

12
- 4344571628
- APPLAB 0003-6951,. 10.1063/1.1775881
- S. V. Kalinin, A. Gruverman, and D. A. Bonnel, Appl. Phys. Lett. APPLAB 0003-6951 85, 795 (2004). 10.1063/1.1775881
- (2004) Appl. Phys. Lett. , vol.85 , pp. 795
- Kalinin, S.V.¹ Gruverman, A.² Bonnel, D.A.³

13
- 34547432034
- FEROA8 0015-0193,. 10.1080/00150190600889304
- A. L. Kholkin, V. V. Shvartsman, D. A. Kiselev, and I. K. Bdikin, Ferroelectrics FEROA8 0015-0193 341, 3 (2006). 10.1080/00150190600889304
- (2006) Ferroelectrics , vol.341 , pp. 3
- Kholkin, A.L.¹ Shvartsman, V.V.² Kiselev, D.A.³ Bdikin, I.K.⁴

14
- 32944480226
- JMTSAS 0022-2461,. 10.1007/s10853-005-5946-0
- A. Gruverman and S. V. Kalinin, J. Mater. Sci. JMTSAS 0022-2461 41, 107 (2006). 10.1007/s10853-005-5946-0
- (2006) J. Mater. Sci. , vol.41 , pp. 107
- Gruverman, A.¹ Kalinin, S.V.²

15
- 30344443960
- SUSCAS 0039-6028,. 10.1016/j.susc.2005.09.053
- R. Desfeux, C. Legrand, A. Da Costa, D. Chateigner, R. Bouregba, and G. Poullain, Surf. Sci. SUSCAS 0039-6028 600, 219 (2006). 10.1016/j.susc.2005.09. 053
- (2006) Surf. Sci. , vol.600 , pp. 219
- Desfeux, R.¹ Legrand, C.² Da Costa, A.³ Chateigner, D.⁴ Bouregba, R.⁵ Poullain, G.⁶

16
- 44649132816
- IFEREU 1058-4587,. 10.1080/10584580701320123
- A. Ferri, A. Da Costa, R. Desfeux, M. Detalle, G. S. Wang, and D. Ŕmiens, Integr. Ferroelectr. IFEREU 1058-4587 91, 80 (2007). 10.1080/10584580701320123
- (2007) Integr. Ferroelectr. , vol.91 , pp. 80
- Ferri, A.¹ Da Costa, A.² Desfeux, R.³ Detalle, M.⁴ Wang, G.S.⁵ Ŕmiens, D.⁶

17
- 18644368163
- JAPIAU 0021-8979,. 10.1063/1.1489069
- A. Stanishevsky, B. Nagaraj, J. Melngailis, R. Ramesh, L. Khriachtchev, and E. McDaniel, J. Appl. Phys. JAPIAU 0021-8979 92, 3275 (2002). 10.1063/1.1489069
- (2002) J. Appl. Phys. , vol.92 , pp. 3275
- Stanishevsky, A.¹ Nagaraj, B.² Melngailis, J.³ Ramesh, R.⁴ Khriachtchev, L.⁵ McDaniel, E.⁶

18
- 0035956096
- APPLAB 0003-6951,. 10.1063/1.1421638
- S. Tiedke, T. Schmitz, K. Prume, A. Roelofs, T. Schneller, U. Kall, R. Waser, C. S. Ganpule, V. Nagarajan, A. Stanishevsky, and R. Ramesh, Appl. Phys. Lett. APPLAB 0003-6951 79, 3678 (2001). 10.1063/1.1421638
- (2001) Appl. Phys. Lett. , vol.79 , pp. 3678
- Tiedke, S.¹ Schmitz, T.² Prume, K.³ Roelofs, A.⁴ Schneller, T.⁵ Kall, U.⁶ Waser, R.⁷ Ganpule, C.S.⁸ Nagarajan, V.⁹ Stanishevsky, A.¹⁰ Ramesh, R.¹¹

19
- 34249999725
- JCRGAE 0022-0248,. 10.1016/j.jcrysgro.2007.04.020
- M. Detalle, G. Wang, D. Ŕmiens, P. Ruterana, P. Roussel, and B. Dkhil, J. Cryst. Growth JCRGAE 0022-0248 305, 137 (2007). 10.1016/j.jcrysgro. 2007.04.020
- (2007) J. Cryst. Growth , vol.305 , pp. 137
- Detalle, M.¹ Wang, G.² Ŕmiens, D.³ Ruterana, P.⁴ Roussel, P.⁵ Dkhil, B.⁶

20
- 55349107535
- SAAPEB 0924-4247,. 10.1016/j.sna.2008.07.021
- R. Herdier, M. Detalle, D. Jenkins, C. Soyer, and D. Ŕmiens, Sens. Actuators, A SAAPEB 0924-4247 148, 122 (2008). 10.1016/j.sna.2008.07.021
- (2008) Sens. Actuators, A , vol.148 , pp. 122
- Herdier, R.¹ Detalle, M.² Jenkins, D.³ Soyer, C.⁴ Ŕmiens, D.⁵

21
- 0003412161
- (Pergamon, New York).
- J. F. Ziegel, The Stopping and Range of Ion in Solid (Pergamon, New York, 1985).
- (1985) The Stopping and Range of Ion in Solid
- Ziegel, J.F.¹

22
- 0000898462
- APPLAB 0003-6951,. 10.1063/1.124391
- C. S. Ganpule, A. Stanshevsky, Q. Su, S. Aggarwal, J. Melngailis, E. Williams, and R. Ramesh, Appl. Phys. Lett. APPLAB 0003-6951 75, 409 (1999). 10.1063/1.124391
- (1999) Appl. Phys. Lett. , vol.75 , pp. 409
- Ganpule, C.S.¹ Stanshevsky, A.² Su, Q.³ Aggarwal, S.⁴ Melngailis, J.⁵ Williams, E.⁶ Ramesh, R.⁷

23
- 35348846979
- SCIEAS 0036-8075,. 10.1126/science.246.4936.1400
- J. F. Scott and C. A. Paz de Araujo, Science SCIEAS 0036-8075 246, 1400 (1989). 10.1126/science.246.4936.1400
- (1989) Science , vol.246 , pp. 1400
- Scott, J.F.¹ Paz De Araujo, C.A.²

24
- 70349678646
- MRSBEA 0883-7694.
- D. A. Bonnell, S. V. Kalinin, A. L. Kholkin, and A. Gruverman, MRS Bull. MRSBEA 0883-7694 34, 648 (2009).
- (2009) MRS Bull. , vol.34 , pp. 648
- Bonnell, D.A.¹ Kalinin, S.V.² Kholkin, A.L.³ Gruverman, A.⁴

25
- 0035971862
- APPLAB 0003-6951,. 10.1063/1.1366644
- A. Gruverman, A. Kholkin, A. Kingon, and H. Tokumoto, Appl. Phys. Lett. APPLAB 0003-6951 78, 2751 (2001). 10.1063/1.1366644
- (2001) Appl. Phys. Lett. , vol.78 , pp. 2751
- Gruverman, A.¹ Kholkin, A.² Kingon, A.³ Tokumoto, H.⁴

26
- 36348987253
- JALCEU 0925-8388,. 10.1016/j.jallcom.2005.12.133
- A. Rüdiger and R. Waser, J. Alloys Compd. JALCEU 0925-8388 449, 2 (2008). 10.1016/j.jallcom.2005.12.133
- (2008) J. Alloys Compd. , vol.449 , pp. 2
- Rüdiger, A.¹ Waser, R.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.