Enhancement in nanoscale electrical properties of lead zirconic titanate island fabricated by focused ion beam

Journal of Applied Physics

Volumn 105, Issue 4, 2009, Pages

  Liang, R H ^a   Rmiens D ^a   Deresmes, D ^a   Soyer, C ^a   Troadec, D ^a   Dong, X L ^b   Yang, L H ^b   Desfeux, R ^c   Da Costa, A ^c   Blach, J F ^c  

^a INSTITUT D ELECTRONIQUE   (France)

^b SHANGHAI INSTITUTE OF CERAMICS   (China)

^c UNITÉ DE CATALYSE ET DE CHIMIE DU SOLIDE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC RANDOM ACCESS STORAGE; FERROELECTRIC FILMS; FERROELECTRIC RAM; FERROELECTRICITY; FOCUSED ION BEAMS; LEAD COMPOUNDS; MEMS; NANOTECHNOLOGY; PHOTODEGRADATION; SCANNING PROBE MICROSCOPY;

ANNEALING TREATMENTS; CRYSTALLIZATION TEMPERATURE; DYNAMIC RANDOM ACCESS MEMORY; ETCHING PROCESS; FERROELECTRIC RANDOM ACCESS MEMORY; KELVIN FORCE MICROSCOPY; MICRO ELECTRO MECHANICAL SYSTEM; PIEZORESPONSE FORCE MICROSCOPY;

FABRICATION;

EID: 61449201339     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3073892     Document Type: Article

References (27)

1. J. F. Scott and C. A. P. de Araujo, Science 0036-8075 10.1126/science.246.4936.1400 246, 1400 (1989).
2. M. Moallem, M. R. Kermani, R. V. Patel, and M. Ostojic, IEEE Trans. Control Syst. Technol. 2, 757 (2004).
3. A. M. Flyn, L. S. Tavrow, S. F. Bart, R. A. Brooks, D. J. Ehrlich, K. R. Udayakumar, and L. E. Cross, J. Microelectromech. Syst. 1057-7157 10.1109/84.128055 1, 44 (1992).
4. S. Mancha, Ferroelectrics 135, 131 (1992). 0015-0193
5. T. Kawagughi, H. Adachi, K. Setsune, O. Yamazaki, and K. Wasa, Appl. Opt. 23, 2187 (1984). 0003-6935
6. K. Saito, J. H. Choi, T. Fukuda, and M. Ohue, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.31.L1260 31, L1260 (1992).
7. S. Yokoyama, Y. Ito, K. Ishihara, K. Hamada, T. Ohnishi, J. Kudo, and K. Sakiyama, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.34.767 34, 767 (1995).
8. C. W. Chung and C. J. Kim, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.36.2747 36, 2747 (1997).
9. K. Torii, H. Kawakami, H. Miki, K. Kushida, T. Itiga, Y. Goto, T. Kumihashi, N. Yokoyama, M. Moniwa, K. Shoji, T. Kaga, and Y. Fujisaki, Integr. Ferroelectr. 16, 21 (1997). 1058-4587
10. M. G. Kang, K. T. Kim, and C. I. Kim, Thin Solid Films 435, 222 (2003).
11. J. K. Lee, T. Y. Kim, I. Chung, and S. B. Desu, Appl. Phys. Lett. 0003-6951 10.1063/1.124367 75, 334 (1999).
12. Y. J. Song, N. W. Jang, S. Y. Lee, D. J. Jung, H. H. Kim, S. H. Joo, J. K. Lee, and K. Kim, Integr. Ferroelectr. 37, 47 (2001). 1058-4587
13. C. S. Ganpule, A. Stanishevsky, Q. Su, S. Aggarwal, J. Melngailis, E. Williams, and R. Ramesh, Appl. Phys. Lett. 0003-6951 10.1063/1.124391 75, 409 (1999).
14. M. Alexe, C. Harnagea, D. Hesse, and U. Gösele, Appl. Phys. Lett. 0003-6951 10.1063/1.124822 75, 1793 (1999).
15. C. S. Ganpule, A. Stanishevsky, S. Aggarwal, J. Melngailis, E. Williams, and R. Ramesh, Appl. Phys. Lett. 0003-6951 10.1063/1.125485 75, 3874 (1999).
16. M. Detalle, G. Wang, D. Ŕmiens, P. Ruterana, P. Roussel, and B. Dkhil, J. Cryst. Growth 305, 137 (2007). 0022-0248
17. R. Desfeux, C. Legrand, A. Da Costa, D. Chateigner, R. Bouregba, and G. Poullain, Surf. Sci. 0039-6028 10.1016/j.susc.2005.09.053 600, 219 (2006).
18. C. Legrand, A. Da Costa, R. Desfeux, C. Soyer, and D. Ŕmiens, Appl. Surf. Sci. 253, 4942 (2007). 0169-4332
19. A. Ferri, A. Da Costa, R. Desfeux, M. Detalle, G. S. Wang, and D. Ŕmiens, Integr. Ferroelectr. 91, 80 (2007).
20. S. Tiedke, Appl. Phys. Lett. 0003-6951 10.1063/1.1421638 79, 3678 (2001).
21. J. F. Meng, R. S. Katiyar, and G. T. Zou, Phys. Status Solidi A 0031-8965 10.1002/1521-396X(199712)164:2<851::AID-PSSA8513.0.CO;2-J 164, 851 (1997).
22. X. Lou, X. Hu, M. Zhang, F. D. Morrison, S. A. T. Redfern, and J. F. Scott, J. Appl. Phys. 0021-8979 10.1063/1.2171783 99, 044101 (2006).
23. J. Frantti, V. Lantto, S. Nishio, and M. Kakihana, Phys. Rev. B 0163-1829 10.1103/PhysRevB.59.12 59, 12 (1999).
24. J. F. Meng, R. S. Katiyar, G. T. Zou, and X. H. Wang, Phys. Status Solidi A 0031-8965 10.1002/1521-396X(199712)164:2<851::AID-PSSA8513.0.CO;2-J 164, 851 (1997).
25. K. Nomura, Y. Takeda, M. Maeda, and N. Shibata, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.39.5247 39, 5247 (2000).
26. C. Soyer, E. Cattan, and D. Ŕmiens, J. Appl. Phys. 0021-8979 10.1063/1.1476970 92, 1048 (2002).
27. R. H. Liang, D. Ŕmiens, C. Soyer, N. Sama, X. L. Dong, and G. S. Wang, Microelectron. Eng. 85, 670 (2008).