Piezoelectric thin films for MEMS applications - A comparative study of PZT, 0.7PMN-0.3PT and 0.9PMN-0.1PT thin films grown on Si by r.f. magnetron sputtering

Sensors and Actuators, A: Physical

Volumn 148, Issue 1, 2008, Pages 122-128

  Herdier, Romain ^a,b   Detalle, M ^a   Jenkins, David ^c   Soyer, Caroline ^a   Remiens, Denis ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b ONERA   (France)

^c UNIVERSITY OF PLYMOUTH   (United Kingdom)

Author keywords

Ferroelectricity; Piezoelectric properties; PMN PT; PZT; Thin films

Indexed keywords

CHARACTERIZATION; DIELECTRIC MATERIALS; ELECTRODES; FERROELECTRIC FILMS; FERROELECTRIC MATERIALS; FERROELECTRICITY; FILMS; PIEZOELECTRICITY; SPUTTERING;

COMPARATIVE STUDIES; FERROELECTRIC AND PIEZOELECTRIC PROPERTIES; MATERIAL COMPOSITIONS; MEMS APPLICATIONS; PIEZOELECTRIC PROPERTY; PIEZOELECTRIC THIN FILMS; R.F. MAGNETRON SPUTTERING; SILICON SUBSTRATES;

THIN FILMS;

EID: 55349107535     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2008.07.021     Document Type: Article

References (25)

1. V.V. Shvarstsman, A.L. Kholkin, Phys. Rev. B 69 (2004) 014102.
2. K.P. Chen, X.W. Zhang, X.Y. Zhao, H.-S. Luo, Mater. Lett. 60 (2006) 1634-1639.
3. B. Noheda, D.E. Cox, G. Shirane, J. Gao, Z.-G. Ye, Phys. Rev. B 66 (2002) 054104.
4. S.-E. Park, T.R. Shrout, J. Appl. Phys. 82 (1997) 1804-1811.
5. G.H. Haertling, J. Am. Ceram. Soc. 82 (1999) 797.
6. L.F. Francis, D.A. Payne, J. Am. Ceram. Soc. 74 (12) (1991) 3000.
7. C. Tantigate, J. Lee, A. Safari, Appl. Phys. Lett. 66 (13) (1995) 1661.
8. G. Vélu, D. Rèmiens, J. Eur. Ceram. Soc. 19 (1999) 2005-2013.
9. E. Fribourg-Blanc, E. Cattan, D. Rémiens, M. Dupont, D. Osmont, J. Phys. IV 11 (2001) 145-150.
10. R.A. Dorey, R.W. Whatmore, J. Eur. Ceram. Soc. 24 (2004) 1091-1094.
11. A. Hall, M. Allahverdi, E.K. Akdogan, A. Safari, J. Electroceram. 15 (2) (2005) 143-150.
12. M. Detalle, R. Herdier, G.S. Wang, D. Rémiens, P. Roussel, E. Fribourg-Blanc, Ferroelectrics 351 (2007) 15-24.
13. S.B. Desu, C.H. Peng, L. Kammerdiner, P.J. Schuele, Mater. Res. Soc. Symp. Proc. 200 (2000) 319.
14. C.A. Randal, A.S. Bhalla, T.R. Shrout, L.E.J. Cross, Mater. Res. 5 (1990) 829.
15. G. Velu, G. Rèmiens, Microelectron. Reliab. 39 (1999) 241.
16. A.L. Kholkin, Ch. Wutchrich, D.V. Taylor, N. Setter, Rev. Sci. Instrum. 67 (5) (1996) 1935-1941.
17. T. lijima, H. Okino, T. Yamamoto, Presented at ISAF 2007, Nara, Japan, May, 2007.
18. R. Herdier, D.Jenkins, E. Dogheche, D. Rémiens, Rev. Sci. Instrum. 77 (9) (2006) 093905.
19. D. Jenkins, M. Pokorny, R. Herdier, E. Dogheche, D. Remiens, M. Sulc, Ferroelectrics 351 (1) (2007) 122-130.
20. M. Tyunina, J. Levoska, Phys. Rev. B 63 (2001) 224102.
21. L. Kholkin, M.L. Calzada, P. Ramos, J. Mendiola, N. Setter, Appl. Phys. Lett. 69 (23) (1996) 3602-3604.
22. J. Wang, E.Z. Luo, K.H. Wong, H.L.W. Chan, J.B. Xu, I.H. Wilson, C.L Choy, Mater. Characterization 48 (2/3) (2002) 215-220.
23. Z. Kighelman, D. Damjanovic, N. Setter, J. Appl. Phys. 89 (2) (2000) 1393-1401.
24. N. Sama, R. Herdier, D. Jenkins, C. Soyer, D. Remiens, M. Detalle, R. Bouregba, J. Cryst. Growth 310 (2008) 3299-3302.
25. D. Rémiens, E. Cattan, C. Soyer, T. Haccart, Mater. Sci. Semicond. Process. 92 (6) (2002) 348.