Recombination processes controlling the carrier lifetime in n -4H-SiC epilayers with low Z1/2 concentrations

Journal of Applied Physics

Volumn 108, Issue 3, 2010, Pages

  Klein, P B ^a   Myers Ward, R ^a   Lew, K K ^a   Vanmil, B L ^a   Eddy, C R ^a   Gaskill, D K ^a   Shrivastava, A ^b   Sudarshan, T S ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF SOUTH CAROLINA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK DEFECTS; BULK LIFETIME; BULK RECOMBINATION; CARRIER CAPTURE; DEVICE STRUCTURES; EPILAYERS GROWN; FLAT BAND; HIGH INJECTION; INJECTION CARRIERS; INJECTION MEASUREMENT; LOW CONCENTRATIONS; PASSIVATED SURFACE; PHOTOLUMINESCENCE DECAY; RECOMBINATION PROCESS; RECOMBINATION RATE; SIC EPILAYERS; SURFACE AND INTERFACES; SURFACE BAND BENDING; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; UPPER LIMITS;

CONCENTRATION (PROCESS); DEFECT DENSITY; DEFECTS; EPILAYERS; EPITAXIAL GROWTH; PROCESS CONTROL; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SILICON CARBIDE; SURFACES;

CARRIER LIFETIME;

EID: 77955896427     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3466745     Document Type: Article

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