Optical characterization of excess carrier lifetime and surface recombination in 4H/6H-SiC

Applied Physics Letters

Volumn 79, Issue 3, 2001, Pages 365-367

  Galeckas, A ^a   Linnros, J ^a   Frischholz, M ^b   Grivickas, V ^c  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b ACREO AB   (Sweden)

^c VILNIUS UNIVERSITY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); ION IMPLANTATION; LASER PULSES; LIGHT ABSORPTION; NEODYMIUM LASERS; OPTICAL PUMPING; POLISHING; THERMOOXIDATION; THIN FILMS;

EPITAXIAL FILMS;

SILICON CARBIDE;

EID: 0035898459     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1385588     Document Type: Article

References (11)