Physical understanding and technological control of carrier lifetimes in semiconductor materials and devices: A critique of conceptual development, state of the art and applications

Progress in Quantum Electronics

Volumn 29, Issue 2, 2005, Pages 59-163

  Khanna, Vinod Kumar ^a  

^a CENTRAL ELECTRONICS ENGINEERING RESEARCH INSTITUTE   (India)

Author keywords

Auger recombination; Carrier lifetime; Carrier recombination generation mechanisms; Lifetime control; Lifetime measurement; Shockley Read Hall recombination

Indexed keywords

BIPOLAR TRANSISTORS; CHARGE CARRIERS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ENERGY ABSORPTION; INTEGRATED CIRCUITS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; MOSFET DEVICES; QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; STATISTICAL METHODS; THYRISTORS;

AUGER RECOMBINATION; CARRIER LIFETIME; CARRIER RECOMBINATION-GENERATION MECHANISMS; LIFETIME CONTROL; LIFETIME MEASUREMENT; SHOKLEY-READ-HALL RECOMBINATION;

SEMICONDUCTOR MATERIALS;

EID: 15944413160     PISSN: 00796727     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.pquantelec.2005.01.002     Document Type: Review

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