Temperature dependence of the absorption coefficient in 4H- and 6H-silicon carbide at 355 nm laser pumping wavelength

Physica Status Solidi (A) Applied Research

Volumn 191, Issue 2, 2002, Pages 613-620

  Galeckas, A ^a   Grivickas, P ^a   Grivickas, V ^b   Bikbajevas, V ^b   Linnros, J ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b VILNIUS UNIVERSITY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRON TRANSITIONS; ENERGY GAP; LIGHT POLARIZATION; PUMPING (LASER); THERMAL EFFECTS;

ABSORPTION COEFFICIENT;

SILICON CARBIDE;

EID: 0036611494     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200206)191:2<613::AID-PSSA613>3.0.CO;2-T     Document Type: Article

References (21)