Influence of structural defects on carrier lifetime in 4H-SiC epitaxial layers: Optical lifetime mapping

Journal of Applied Physics

Volumn 105, Issue 12, 2009, Pages

  Hassan, J ^a   Bergman, J P ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; CARROT DEFECTS; GROWTH CONDITIONS; HIGH SPATIAL RESOLUTION; HIGH-RESOLUTION MAPPING; LIFETIME MAPPING; LIFETIME MEASUREMENTS; LIFETIME REDUCTION; MICROPIPE; NON-DESTRUCTIVE TECHNIQUE; SIC EPILAYERS; SPATIAL RESOLUTION; STEP SIZE; STRUCTURAL DEFECT; SUSCEPTOR; THREADING SCREW;

DEFECTS; EPILAYERS; EPITAXIAL GROWTH; EPITAXIAL LAYERS; HETEROJUNCTION BIPOLAR TRANSISTORS; IMAGE RESOLUTION; MAPPING; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; STACKING FAULTS;

CARRIER LIFETIME;

EID: 67650266635     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3147903     Document Type: Conference Paper

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