Silicon Carbide Power-Device Products - Status and Upcoming Challenges with a Special Attention to Traditional, Nonmilitary Industrial Applications

Silicon Carbide

Volumn 2, Issue , 2011, Pages 21-33

  Friedrichs, Peter ^a  

^a SiCED Electronics Development GmbH and Co KG   (Germany)

Author keywords

Nonmilitary industrial applications; Power electronics; Power device products; SiC; Silicon carbide

Indexed keywords

EID: 84885832779     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1002/9783527629077.ch2     Document Type: Chapter

References (27)

1. R. Rupp, C. Miesner, and I. Zverev, Combination of new generation Cool-MOS and thinQ! Silicon Carbide Schottky diodes: new horizons in hard switching applications, in: Proc. 2001 Power Conversion Intelligent Motion Conference (PCIM 2001), Chicago, 2001.
2. S. D. Round, P. Karutz, M. L. Heldwein, and J. W. Kolar, Towards a 30 kW/liter, Three-Phase Unity Power Factor Rectifier, presented at the PCC 2007, Nagoya, 2-5 April 2007.
3. W. Tursky, Devices and their Packaging Technology, in: Proc. IEEE 4th Workshop Future of Electronic Power Processing and Conversion, 27-29 May 2001, Salina, Italy, pp. 4-6.
4. P. A. Mawby and R. J. Bassett, IEE Proc., Circuits Devices Syst. 148(2), 53-54 (2001).
5. M. Zhang, P. Pirouz, and H. Lendenmann, Appl. Phys. Lett. 83(16), 3320-3322 (2003).
6. V. F. Tsvetkov, D. N. Henshall, M. F. Brdy, R. C. Glass, and C. H. Carter, Mater. Res. Soc. Symp. Proc. 512 (Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature), 89-99 (1998).
7. F. Bjoerk, J. Hancock, M. Treu, R. Rupp, and T. Reimann, 2nd Generation 600V SiC Schottky Diodes Use Merged PN/Schottky Structure for Surge Overload Protection, in: Proceedings from APEC 2006, CD publication, ISBN 0-7803-9548-4.
8. B. Eckhardt, A. Hofmann, and M. Maerz, Automotive Powertrain DC/DC Converter with 25 kW/dm 3 by Using SiC Diodes, in: Proc. 4th International Conference on Integrated Power Systems, 7-9 June 2006, Naples, Italy, CD-ROM, ISBN 978-3-8007-2972-2.
9. B. Weis, M. Wölz, and D. Peters, A new 690V AC drive with integrated sinewave output filter and SiC Schottky freewheeling diodes, in: Proceedings of the SPS/IPC/Drives 2006, Nürnberg (VDE Verlag, Berlin, Offenbach, 2006), ISBN 3-8007-2994-6.
10. Sei-Hyung Ryu, S. Krishnaswami, M. O'Loughlin, J. Richmond, A. Agarwal, J. Palmour, and A. R. Hefner, IEEE Electron Device Lett. 25(8), 556-558 (2004).
11. A. K. Agarwal, S. Krishnaswami, J. Richmond, C. Capell, Sei-Hyung Ryu, J.W. Palmour, S. Balachandran, T. P. Chow, S. Bayne, B. Geil, C. Scozzie, and K. A. Jones, Evolution of the 1600 V, 20 A, SiC Bipolar Junction Transistors, in: Proc. 2005 Power Semiconductor Devices and ICs (ISPSD2005), 23-26 May 2005, Santa Barbara, CA, USA, pp. 271-274.
12. See www.infineon.com/coolmos, datasheets.
13. See www.infineon.com/coolmos, CoolMOS CP application note.
14. S. H. Ryu, S. Krishnaswami, M. Das, J. Richmond, A. Agarwal, J. Palmour, and J. Scofield, Mater. Sci. Forum 483-485, 797-800 (2005).
15. G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, R. K. Chanana, R. A. Weller, S. T. Pantelides, L. C. Feldman, O. W. Holland, M. K. Das, and J. W. Palmour, IEEE Electron Device Lett. 22(4), 176 (2001).
16. D. Peters, SiC Power Devices for Industrial Inverters, presented at ICSCRM 2007, October 2007.
17. J. M. Homberger, S. D. Mounce, R. M. Schupbach, A. B. Lostetter, and H. A. Mantooth, High-temperature silicon carbide (SiC) power switches in multichip power module (MCPM) applications, in: Conference Record of the Fourtieth IAS Annual Meeting, 2-6 October 2005, Vol. 1, pp. 393-398.
18. L. Tolbert, M. Chinthavali, B. Ozpineci, and H. Zhang, High Temperature Power Electronics-SiC Devices Based Applications & Issues, International Conference on High Temperature Electronics (Hitec 2006), Santa Fe (USA), 15-28 May 2006.
19. G. Soelkner, Reliability of SiC power devices against cosmic radiationinduced failure, European Conference on SiC and Related Materials (ECSCRM), Newcastle-upon-Tyne, September 2006.
20. P. Friedrichs, H. Mitlehner, W. Bartsch, K. O. Dohnke, R. Kaltschmidt, U. Weinert, B. Weis, and D. Stephani, Mater. Sci. Forum 338-342, 1243-1246 (2000).
21. M. Mazzola, J. B. Casady, N. Merrett, I. Sankin,W. Draper, D. Seale, V. Bondarenko, Y. Koshka, J. Gafford, and R. Kelley, Mater. Sci. Forum 457-460, 1153-1156 (2004).
22. S. Round, M. Heldwein, J. Kolar, I. Hofsajer, and P. Friedrichs, A SiC JFET driver for a 5 kW, 150 kHz three-phase PWM converter, Conference Record of the Industry Applications Conference, 2005, Fourtieth IAS Annual Meeting, 2-6 October 2005, Vol. 1, pp. 410-416.
23. P. Friedrichs, H. Mitlehner, R. Schörner, K.-O. Dohnke, R. Elpelt, and D. Stephani, The vertical silicon carbide JFET-a fast and low loss solid state power switching device, in: Proc. of the EPE 2001, Graz, Austria, August 2001.
24. D. Peters, P. Friedrichs, R. Schörner, and D. Stephani, Mater. Sci. Forum 389-393, 1125-1128 (2002).
25. W. Bartsch, H. Mitlehner, and S. Gediga, Mater. Sci. Forum 556-557, 889-894 (2007).
26. J. J. Sumakeris, B. A. Hull, M. J. O'Loughlin, M. Skowronski, and V. Balakrishna, Mater. Sci. Forum 556-557, 77-80 (2007).
27. J. M. Ortiz-Rodriguez, T. Duong, A. Rivera-Lopez, and A. R. Hefner, High-Voltage, High-Frequency SiC Power MOSFETs Model Validation, presented at PESC 2007, Orlando, Florida, USA, 17-21 June 2007.