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Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 699-702

Lifetime investigations of 4H-SiC PiN power diodes

(4) Reshanov, S A a Bartsch, W b Zippelius, B a Pensl, G a

a UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

b SiCED Electronics Development GmbH and Co KG (Germany)

Author keywords

CRT; DLTS; Lifetime; OCVD

Indexed keywords

CATHODE RAY TUBES; DEEP LEVEL TRANSIENT SPECTROSCOPY; NITROGEN COMPOUNDS; SILICON CARBIDE;

DEEP DEFECTS; HIGH QUALITY; LIFETIME; LIFETIME MEASUREMENTS; LIFETIME VALUES; OCVD; OPTIMIZED DEVICES; SIC EPILAYERS;

POWER SEMICONDUCTOR DIODES;

EID: 77955889587 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.615-617.699 Document Type: Conference Paper

Times cited : (17)

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