Depth- and time-resolved free carrier absorption in 4H SiC epilayers: A study of carrier recombination and transport parameters

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 529-532

  Grivickas, V ^a,b   Linnros, J ^a   Galeckas, A ^a,b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b VILNIUS UNIVERSITY   (Lithuania)

Author keywords

4H SiC; Carrier Diffusion Length; Recombination Lifetime; Surface Recombination Velocity

Indexed keywords

ABSORPTION; CARRIER CONCENTRATION; INTERFACES (MATERIALS); SEMICONDUCTING SILICON COMPOUNDS; SURFACE PHENOMENA;

FREE CARRIER ABSORPTION (FCA); SURFACE RECOMBINATION VELOCITY;

SILICON CARBIDE;

EID: 3743083902     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

References (6)

1. A. Galeckas, V. Grivickas, J. Linnros, H. Bleichner and C. Hallin, J. Appl. Phys. 81 (1997) p. 3522.
2. V. Grivickas, G. Thungström, V. Bikbajevas, J. Linnros and D. Noreika, Jap. J. Appl. Phys. 34, Part 2 (1995) p. L806.
3. Samples have been kindly supplied by Linköping University group, see ICSR'95 proceedings: A. Henry, J. P. Bergman, O. Kordina, C. Hallin, I. G. Ivanov and E. Jenzen.
4. A. Galeckas, J. Linnros, V. Grivickas, U. Lindefelt and C. Hallin, see this volume.
5. M. S. Tyagi, J. F. Nijs and R. J. Van Oversraeten, Sol. St. Electronics, 25 (1982) p. 411.
6. O. Kordina, J. P. Bergman, C. Hallin and E. Janzen, Appl. Phys. Lett. 69 (1996) p. 679.