Atomic-scale redistribution of dopants in polycrystalline silicon layers

Journal of Applied Physics

Volumn 108, Issue 3, 2010, Pages

  Duguay, S ^a   Colin, A ^b,c   Mathiot, D ^c   Morin, P ^b   Blavette, D ^a  

^a UNIVERSITÉ ET INSA DE ROUEN   (France)

^b STMICROELECTRONICS   (France)

^c UNIVERSITÉ DE STRASBOURG   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALED SAMPLES; ATOM PROBE TOMOGRAPHY; ATOMIC SCALE; DOPANT CONCENTRATIONS; DOPANT SEGREGATION; EXTENDED DEFECT; HETEROGENEOUS PRECIPITATION; IMPLANTATION PROCESS; INTERFACIAL SEGREGATION; LASER ANNEAL; LASER ANNEALING; NANOMETER SIZE; OXIDE LAYER; OXYGEN ATOM; POLYCRYSTALLINE SILICON (POLY-SI); POLYCRYSTALLINE SILICON LAYERS; SEGREGATION RATE;

ANNEALING; DOPING (ADDITIVES); GRAIN BOUNDARIES; OXYGEN; POLYSILICON; SEGREGATION (METALLOGRAPHY); TOMOGRAPHY;

ATOMS;

EID: 77955871832     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3466783     Document Type: Article

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