Drive current enhancement in sub- 40-nm CMOS devices by higher carrier activation with laser spike annealing

Journal of the Electrochemical Society

Volumn 153, Issue 7, 2006, Pages

  Yamamoto, Tomonari ^a   Kubo, Tomohiro ^a   Sukegawa, Takae ^a   Feng, Lucia ^b,c   Wang, Yun ^b   Kase, Masataka ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

^b Ultratech Stepper Inc   (United States)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC RESISTANCE; LASERS; MOS DEVICES; RAPID THERMAL ANNEALING; SEMICONDUCTOR JUNCTIONS;

CARRIER ACTIVATION; GATE DEPLETION; LASER SPIKE ANNEALING (LSA); SOURCE-DRAIN EXTENSION (SDE);

CMOS INTEGRATED CIRCUITS;

EID: 33744809029     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2195892     Document Type: Article

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