Kinetics of arsenic segregation at grain boundaries in polycrystalline silicon

Semiconductor Science and Technology

Volumn 12, Issue 11, 1997, Pages 1438-1445

  Nédélec, Sophie ^a,b   Mathiot, Daniel ^c  

^a ORANGE LABS   (France)

^b STMICROELECTRONICS   (Italy)

^c UNIVERSITÉ DE STRASBOURG   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001720449     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/11/019     Document Type: Article

References (10)

1. Mandurah M M, Saraswat K C, Helms C R and Kamins T I 1980 J. Appl. Phys. 51 5755
2. Mandurah M M, Saraswat K C and Kamins T I 1980 Appl. Phys. Lett. 36 683
3. Carabelas A, Nobili D, and Solmi S 1982 J. Physique 43 C1-187
4. Nédélec S 1996 Thesis INSA de Toulouse
5. Lee E G and Im H B 1991 J. Electrochem. Soc. 138 3465
6. Gondrand C, Sellitto P, Tabikh S, Latreche S and Kaminski A 1997 J. Physique III 7 47
7. Jones S K and Gérodolle A 1991 COMPEL 10 401
8. Mathiot D and Pfister J C 1984 J. Appl. Phys. 55 3518
9. Mathiot D 1991 Phys. Rev. B 45 13 345
10. Kalnitsky A, Hurley P and Lepert A 1996 Electrochem. Soc. Proc. 96-1 431