Three dimensional characterization of dopant distribution in polycrystalline silicon by laser-assisted atom probe

Applied Physics Letters

Volumn 93, Issue 13, 2008, Pages

  Inoue, K ^a   Yano, F ^b   Nishida, A ^b   Tsunomura, T ^b   Toyama, T ^a   Nagai, Y ^a   Hasegawa, M ^a,c  

^a TOHOKU UNIVERSITY   (Japan)

^b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; ATOMS; CONCENTRATION (PROCESS); CRYSTAL GROWTH; FIELD EFFECT TRANSISTORS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; MOS DEVICES; MOSFET DEVICES; POLYSILICON; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS; SILICON; THREE DIMENSIONAL;

AND GATES; ATOM PROBES; ATOMIC RESOLUTIONS; CONCENTRATION PROFILES; DIFFERENT MECHANISMS; DOPANT DISTRIBUTIONS; GRAIN-BOUNDARY DIFFUSION; METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR; POLY-CRYSTALLINE SILICON; POLYCRYSTALLINE-SI; THREE DIMENSIONAL CHARACTERIZATION; THREE-DIMENSIONAL ATOM PROBES; VOLUME-DIFFUSION;

SEMICONDUCTING SILICON;

EID: 53349143961     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2995864     Document Type: Article

References (9)

1. T. Mizuno, J. Okamura, and A. Toriumi, IEEE Trans. Electron Devices 0018-9383 10.1109/16.333844 41, 2216 (1994).
2. P. A. Stolk, F. P. Widdershoven, and D. B. M. Klaassen, IEEE Trans. Electron Devices 0018-9383 10.1109/16.711362 45, 1960 (1998).
3. A. Asenov and S. Saini, IEEE Trans. Electron Devices 0018-9383 10.1109/16.777162 46, 1718 (1999).
4. J. A. Croon, G. Storms, S. Winkelmeier, I. Pollentier, M. Ercken, S. Decoutere, Q. Sansen, and H. E. Maes, Tech. Dig.-Int. Electron Devices Meet. 2002, 307.
5. S. M. Sze, VLSI Technology (McGraw-Hill, New York, 1988).
6. T. F. Kelly and M. K. Miller, Rev. Sci. Instrum. 0034-6748 10.1063/1.2709758 78, 031101 (2007).
7. K. Thompson, J. H. Booske, D. J. Larson, and T. F. Kelly, Appl. Phys. Lett. 0003-6951 10.1063/1.2005368 87, 052108 (2005).
8. K. Thompson, P. L. Flaitz, P. Ronsheim, D. J. Larson, and T. F. Kelly, Science 0036-8075 10.1126/science.1145428 317, 1370 (2007).
9. K. Inoue, F. Yano, A. Nishida, T. Tsunomura, T. Toyama, Y. Nagai, and M. Hasegawa, Appl. Phys. Lett. 0003-6951 10.1063/1.2891081 92, 103506 (2008).