The molecularly controlled semiconductor resistor: How does it work?

ACS Applied Materials and Interfaces

Volumn 1, Issue 11, 2009, Pages 2679-2683

  Capua, Eyal ^a   Natan, Amir ^a   Kronik, Leeor ^a   Naaman, Ron ^a  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

band bending; dipole layer; molecularly controlled resistor; monolayer; surface states

Indexed keywords

ALIPHATIC CHAINS; ANALYTES; BANDBENDING; CONTACT POTENTIAL DIFFERENCE; CURRENT RESPONSE; DEVICE RESPONSE; DIPOLAR MOMENT; DIPOLE LAYER; ELECTRICAL RESPONSE; GAAS; GAAS/ALGAAS; INTERACTIONS WITH SURFACES; MOLECULARLY CONTROLLED RESISTOR; SI DEVICES; SILICON DEVICES; SILICON OXIDE LAYERS; SURFACE PHOTOVOLTAGES; SURFACE STATE; SURFACE STATES;

GALLIUM ALLOYS; GALLIUM ARSENIDE; HETEROJUNCTIONS; MONOLAYERS; RESISTORS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; SILICON OXIDES;

EQUIPMENT;

EID: 77955728045     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am9005622     Document Type: Article

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