Electrical transport and photoemission experiments of alkylphosphonate monolayers on GaAs

Journal of Physical Chemistry C

Volumn 113, Issue 8, 2009, Pages 3313-3321

  Shpaisman, Hagay ^a   Salomon, Eric ^b   Nesher, Guy ^a   Vilan, Ayelet ^a   Cohen, Hagai ^a   Kahn, Antoine ^b   Cahen, David ^a  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

^b Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALKYLPHOSPHONATE; BAND ALIGNMENTS; CARRIER EFFECTIVE MASS; CHARGE TRANSPORTS; DENSE MONOLAYERS; ELECTRICAL MEASUREMENTS; ELECTRICAL TRANSPORT MECHANISMS; ELECTRICAL TRANSPORTS; ELECTRONIC TRANSPORT MEASUREMENTS; END GROUPS; FORWARD BIAS; FREE SURFACES; GAAS; GAAS SURFACES; HIGH QUALITIES; INVERSE PHOTOEMISSION SPECTROSCOPIES; PHOSPHONIC ACIDS; TOP CONTACTS; TRANSPORT CHARACTERISTICS; TRANSPORT DATUM; TUNNEL BARRIERS; TUNNELING BARRIERS; UV- ANDS;

CRYSTALLOGRAPHY; ELECTRON ENERGY LEVELS; EMISSION SPECTROSCOPY; GALLIUM ALLOYS; MERCURY (METAL); ORGANIC ACIDS; PHOTOEMISSION; POWER SUPPLY CIRCUITS; SEMICONDUCTING GALLIUM;

ELECTRIC NETWORK ANALYSIS;

EID: 65249117816     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp808086d     Document Type: Article

References (50)

1. Seker, S.; Meeker, K.; Kuech, T. F.; Ellis, A. B. Chem. Rev. 2000, 100, 2505.
2. Ashkenasy, G.; Cahen, D.; Cohen, R.; Shanzer, A.; Vilan, A. Acc. Chem. Res. 2002, 35, 121.
3. Green, A. M.; Spicer, W. E. J. Vac. Sci. Technol., A 1993, 11, 1061.
4. Ohno, H.; Chiba, D.; Matsukura, F.; Omiya, T.; Abe, E.; Dietl, T.; Ohno, Y.; Ohtani, K. Nature 2000, 408, 944.
5. Malajovich, I.; Kikkawa, J. M.; Awschalom, D. D.; Berry, J. J.; Samarth, N. J. Appl. Phys. 2000, 87, 5073.
6. Wu, D. G.; Ashkenasy, G.; Shvarts, D.; Ussyshkin, R. V.; Naaman, R.; Shanzer, A.; Cahen, D. Angew. Chem., Int. Ed. 2000, 39, 4496.
7. Sheen, C. W.; Shi, J.-X.; Mairtensson, J.; Parikh, A. N.; Allara, D. L. J. Am. Chem. Soc. 1992, 114, 1514.
8. Hsu, J. W. P.; Lang, D. V.; West, K. W.; Loo, Y. L.; Halls, M. D.; Raghavachari, K. J. Phys.Chem. B 2005, 109, 5719.
9. McGuiness, C. L.; Shaporenko, A.; Zharnikov, M.; Walker, A. V.; Allara, D. L. J. Phys. Chem. C 2007, 111, 4226.
10. Aqua, T.; Cohen, H.; Vilan, A.; Naaman, R. J. Phys. Chem. C 2007, 111, 16313.
11. Ohno, H.; Nagahara, L. A.; Mizutani, W.; Takagi, J.; Tokumoto, H. Jpn. J. Appl., Phys. Part 1 1999, 38, 180.
12. Vilan, A.; Ussyshkin, R.; Gartsman, K.; Cahen, D.; Naaman, R.; Shanzer, A. J. Phys. Chem. 1998, 102, 3307.
13. Artzi, R.; Daube, S. S.; Cohen, H.; Naaman, R. Langmuir 2003, 19, 7392.
14. Nesher, G.; Shpaisman, H.; Cahen, D. J. Am. Chem. Soc. 2007, 129, 734.
15. Salomon, A.; Boecking, T.; Chan, C. K.; Amy, F.; Girshevitz, O.; Cahen, D.; Kahn, A. Phys. Rev. Lett. 2005, 95.
16. Thieblemont, F.; Seitz, O.; vilan, A.; Cohen, H.; Salomon, E.; Kahn, A.; Cahen, D. Adv. Mater., in press.
17. Lodha, S.; Janes, D. B. Appl. Phys. Lett. 2004, 85, 2809.
18. Nesher, G.; Vilan, A.; Cohen, H.; Cahen, D.; Amy, F.; Chan, C.; Hwang, J. H.; Kahn, A. J. Phys. Chem. B 2006, 110, 14363.
19. Vilan, A.; Shanzer, A.; Cahen, D. Nature 2000, 404, 166.
20. Hipps, K. W. Science 2001, 294, 536.
21. Vilan, A.; Pejoux, C.; Cahen, D. Adv. Funct. Mater. 2002, 12, 795.
22. Loo, Y. L.; Lang, D. V.; Rogers, J. A.; Hsu, J. W. P. Nano Lett. 2003, 7, 913.
23. Haick, H.; Ambrico, M.; Ghabboun, J.; Ligonzo, T.; Cahen, D. Phys. Chem. Chem. Phys. 2004, 6, 4538.
24. Slowinski, K.; Fong, H. K. Y.; Majda, M. J. Am. Chem. Soc. 1999, 121, 7257.
25. Holmlin, R. E.; Haag, R.; Chabinyc, M. L.; Ismagilov, R. F.; Cohen, A.; Terfort, A.; Rampi, M. A.; Whitesides, G. M. J. Am. Chem. Soc. 2001, 123, 5075.
26. Selzer, Y.; Salomon, A.; Cahen, D. J. Am. Chem. Soc. 2002, 124, 2886.
27. Vilar, M. R.; El Beghdadi, J.; Debontridder, F.; Artzi, R.; Naaman, R.; Ferraria, A. M.; do Rego, A. M. B. Surf. Interface Anal. 2005, 37, 673.
28. Adlkofer, K.; Tanaka, M. Langmuir 2001, 17, 4267.
29. Vilan, A.; Ghabboun, J.; Cahen, D. J. Phys. Chem. B 2003, 107, 6360.
30. Cohen, R.; Kronik, L.; Shanzer, A.; Cahen, D.; Liu, A.; Rosenwaks, Y.; Lorenz, J.; Ellis, A. B. J. Am. Chem. Soc. 1999, 121, 10545.
31. Wen, K.; Maoz, R.; Cohen, H.; Sagiv, J.; Gibaud, A.; Desert, A.; Ocko, B. M. ACS Nano 2008, 2, 579.
32. Cumpson, P. J.; Seah, M. P. Surf. Interface Anal. 1997, 25, 430.
33. Briggs, D.; Seah, M. P. Practical surface analysis; Wiley: New York, 1990; Vol. 1.
34. Recep, A.; Qing, C.; Gerald, J. L. Rev. Sci. Instrum. 1989, 60, 3643.
35. Wu, C. I.; Hirose, Y.; Sirringhaus, H.; Kahn, A. Chem. Phys. Lett. 1997, 272, 43.
36. Adding a surface roughness model to the Cauchy model (using the AFM roughness as input) could improve the accuracy of the total thickness, deduced from ellipsometry.
37. Seitz, O.; Bocking, T.; Salomon, A.; Gooding, J. J.; Cahen, D. Langmuir 2006, 22, 6915.
38. Allara, D. L.; Nuzzo, R. G. Langmuir 1985, 1, 52.
39. Shewchun, J.; Green, M. A.; King, F. D. Solid-State Electron. 1974, 17, 563.
40. Sze, S. M. Physics of Semiconductor Devices, 2nd ed.; Wiley: New York, 1981.
41. Current transport mechanisms, different from thermionic emission, can be formulated with the same functional current-voltage dependence, e.g., diffusion/recombination for an abrupt p+/n junction, but with a different pre-exponential factor and temperature dependence. In a forthcoming publication, we will discuss the issue of different semiconductor-limited transport mechanisms in metal/molecules/semiconductor systems.
42. Simmons, J. G. J. Appl. Phys. 1963, 34, 2581.
43. Simmons, J. G. J. Appl. Phys. 1964, 35, 2655.
44. Salomon, A.; Shpaisman, H.; Seitz, O.; Boecking, T.; Cahen, D. J. Phys. Chem. C 2008, 112, 3969; see figure SI-2.
45. Cahen, D.; Kahn, A. Adv. Mater. 2003, 14, 271.
46. Segev, L.; Salomon, A.; Natan, A.; Cahen, D.; Kronik, L.; Amy, F.; Chan, C. K.; Kahn, A. Phys. Rev. B 2006, 74, 165353/1.
47. Tung, R. T. Phys. Rev. Lett. 1984, 52, 461.
48. Delhalle, J.; Andre, J. M.; Delhalle, S.; Pireaux, J. J.; Caudano, R.; Verbist, J. J. J. Chem. Phys. 1974, 60, 595.
49. Amy, F.; Chan, C.; Kahn, A. Org. Electron. 2005, 6, 85.
50. Salomon, A.; Boecking, T.; Seitz, O.; Markus, T.; Amy, F.; Chan, C. K.; Cahen, D.; Kahn, A. Adv. Mater. 2007, 19, 445.