Analysis of 3D current flow in undoped FinFETs and approaches for compact modeling

Proceedings of the 16th International Conference - Mixed Design of Integrated Circuits and Systems, MIXDES 2009

Volumn , Issue , 2009, Pages 33-38

  Kloes, Alexander ^a   Weidemann, Michaela ^a   Schwarz, Mike ^a  

^a TECHNISCHE HOCHSCHULE MITTELHESSEN   (Germany)

Author keywords

Compact model; Current; FinFET; MOSFET; Potential

Indexed keywords

3D EFFECTS; ANALYTICAL MODEL; CHANNEL CROSS SECTION; CHANNEL CURRENTS; COMPACT MODEL; COMPACT MODELING; CURRENT EQUATION; CURRENT FLOWS; CURRENT PATHS; ELECTROSTATIC POTENTIALS; FINFETS; GEOMETRY EFFECTS; MOS-FET; PINCHOFF; SEMIEMPIRICAL MODELS; SILICON SURFACES; SIMPLE MODEL; SUB-THRESHOLD BEHAVIOR; SUBTHRESHOLD; SUBTHRESHOLD SLOPE; THRESHOLD CONDITION; THRESHOLD OPERATION;

FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUITS; MOSFET DEVICES;

THREE DIMENSIONAL;

EID: 72149089839     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. N. Collaert et al.: Multi-gate devices for the 32nm technology node and beyond, Proceedings ESSDERC, Munich, 2007.
2. T and subthreshold slope, IEEE TED, Vol. 12, No. 12, 2008.
3. Weber: Electromagnetic fields, Volume 1, Wiley, 1950.
4. A. Kloes, A. Kostka: A new analytical method of solving 2D Poisson's equation in MOS devices applied to threshold voltage and subthreshold modeling, Solid-State Electron., Vol. 39, 1996.
5. H. Borli, S. Kolberg, T. A. Fjeldly, B. Iniguez: Precise modeling framework for short-channel double-gate and gate-all-around MOSFETs, IEEE TED, Vol. 55, No. 10, 2008.
6. TCAD Sentaurus, Version X-2005.10, Manual, Synopsys, Inc.
7. B. Doyle et al.: Tri-gate fully depleted CMOS transistors: Fabrication, design and layout. Symposium on VLSI Technology 2003, Digest of technical papers, 2003.
8. G. Pei et al.: FinFET design considerations based on 3-D simulation and analytical modeling, IEEE TED, Vol. 49, No. 8, 2002.
9. M. Weidemann, A. Kloes, M. Schwarz, B. Iniguez: 2D physics-based compact model for channel length modulation in lightly doped DG FETs, Proceedings MIXDES 2009, Lodz, 2009.
10. A. Kloes: Unified current equation for predictive modeling of submicron MOSFETs, Solid-State Electron., Vol. 49, 2005.
11. N. Arora: MOSFET models for VLSI circuit simulation, Springer- Verlag, Wien, 1993.