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Volumn 49, Issue 1, 2005, Pages 85-95

Unified current equation for predictive modeling of submicron MOSFETs

Author keywords

Compact modeling; Mobility model; MOSFET; Predictive modeling; Submicron; Subthreshold slope

Indexed keywords

APPROXIMATION THEORY; CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRIC CURRENTS; NETWORKS (CIRCUITS); POISSON EQUATION;

EID: 9544235193     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.07.007     Document Type: Article
Times cited : (11)

References (14)
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  • 3
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    • MOSFET modeling for circuit simulation
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  • 4
    • 3042510837 scopus 로고    scopus 로고
    • Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
    • BSIM4.4.0 MOSFET Model-User's Manual. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley; 2004.
    • (2004) BSIM4.4.0 MOSFET Model-user's Manual
  • 6
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    • Philips Research Laboratories, Eindhoven
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    • MOS Model 11, Documentation
  • 7
    • 0030415562 scopus 로고    scopus 로고
    • A new physics-based, predictive compact model for small-geometry MOSFETs including two-dimensional calculations with a close link to process and layout data
    • Kloes A, Kostka A. A new physics-based, predictive compact model for small-geometry MOSFETs including two-dimensional calculations with a close link to process and layout data. IEDM Tech Dig 1996:147-50.
    • (1996) IEDM Tech Dig , pp. 147-150
    • Kloes, A.1    Kostka, A.2
  • 8
    • 9544223160 scopus 로고    scopus 로고
    • A physics-based, analytical model for the threshold voltage in MOSFETs using a unified approach to account for short- And narrow-channel effects
    • Symposium A/D, National Tsing Hua University, Hsinchu, Taiwan, ROC
    • Kloes A, Kostka A. A physics-based, analytical model for the threshold voltage in MOSFETs using a unified approach to account for short- and narrow-channel effects. In: 1996 International electron devices and materials symposia, symposium A/D, National Tsing Hua University, Hsinchu, Taiwan, ROC. p. 285-8.
    • 1996 International Electron Devices and Materials Symposia , pp. 285-288
    • Kloes, A.1    Kostka, A.2
  • 9
    • 0343777410 scopus 로고    scopus 로고
    • PREDICTMOS-a predictive compact model of small-geometry MOSFETs for circuit simulation and device scaling calculations
    • Kloes A, Kostka A. PREDICTMOS-a predictive compact model of small-geometry MOSFETs for circuit simulation and device scaling calculations. Solid-State Electron 2000;44: 1145-56.
    • (2000) Solid-state Electron , vol.44 , pp. 1145-1156
    • Kloes, A.1    Kostka, A.2
  • 10
    • 0030396983 scopus 로고    scopus 로고
    • A new analytical method of solving 2D Poisson's equation in MOS devices applied to threshold voltage and subthreshold modeling
    • Kloes A, Kostka A. A new analytical method of solving 2D Poisson's equation in MOS devices applied to threshold voltage and subthreshold modeling. Solid-State Electron 1996;39: 1761-75.
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    • Kloes, A.1    Kostka, A.2
  • 13
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    • PREDICTMOS MOSFET model and its application to submicron CMOS inverter delay analysis
    • Bangalore, India
    • Bhattacharyya AB, Ulman S. PREDICTMOS MOSFET model and its application to submicron CMOS inverter delay analysis. In: ASP-DAC/VLSI design conference, Bangalore, India, 2002.
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  • 14
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.