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Volumn 123, Issue 5, 2003, Pages 462-467

Preliminary Experiments of Cu Interconnect Preparation by Magnetically Transported-Shielded Cathodic Arc Deposition

Author keywords

cathodic arc deposition; Cu film; deposition rate; plasma magnetic transportation; shielded method; wiring

Indexed keywords


EID: 77955454147     PISSN: 03854205     EISSN: 13475533     Source Type: Journal    
DOI: 10.1541/ieejfms.123.462     Document Type: Article
Times cited : (2)

References (21)
  • 1
    • 0037012504 scopus 로고    scopus 로고
    • Impurity redistributions in electroplated Cu films during self-annealing
    • M.-S. Yoon, Y.-J. Park, and Y.-C. Joo : “Impurity redistributions in electroplated Cu films during self-annealing”, Thin Solid Films, Vol. 408, p. 230 (2002).
    • (2002) Thin Solid Films , vol.408 , pp. 230
    • Yoon, M.-S.1    Park, Y.-J.2    Joo, Y.-C.3
  • 2
    • 0037081285 scopus 로고    scopus 로고
    • Plasma pretreatment of the Cu seed layer surface in Cu electroplating
    • J. Oh, J. Lee, and C. Lee : “Plasma pretreatment of the Cu seed layer surface in Cu electroplating”, Mater. Chem. & Phys., Vol. 73, p. 227 (2002).
    • (2002) Mater. Chem. & Phys. , vol.73 , pp. 227
    • Oh, J.1    Lee, J.2    Lee, C.3
  • 3
    • 0000721084 scopus 로고    scopus 로고
    • Why is coordination chemistry stretching the limits of micro-electronics technology?
    • P. Doppelt : “Why is coordination chemistry stretching the limits of micro-electronics technology?”, Coordination Chem. Rev., Vol. 178-180, p. 1785 (1998).
    • (1998) Coordination Chem. Rev. , vol.178-180 , pp. 1785
    • Doppelt, P.1
  • 4
    • 0032631833 scopus 로고    scopus 로고
    • (hfac)Cu(I)(MP) (hfac=hecafluoroacetylacetonate, MP=4-methyl-l-pentene) and (hfac)Cu(I)(DMB) (DMB=3,3-dimethyl-l-butene) for the chemical vapor deposition of copper film
    • S.-W. Kang, S.-H. Han, and S.-W. Rhee : “(hfac)Cu(I)(MP) (hfac=hecafluoroacetylacetonate, MP=4-methyl-l-pentene) and (hfac)Cu(I)(DMB) (DMB=3,3-dimethyl-l-butene) for the chemical vapor deposition of copper film”, Thin Solid Films, Vol. 350, p. 10 (1999).
    • (1999) Thin Solid Films , vol.350 , pp. 10
    • Kang, S.-W.1    Han, S.-H.2    Rhee, S.-W.3
  • 5
    • 0033904958 scopus 로고    scopus 로고
    • Preparation of copper films by metal organic chemical vapor deposition on various substrates
    • N.-I. Cho, Y. Sul : “Preparation of copper films by metal organic chemical vapor deposition on various substrates”, Mater. Sci. & Eng., Vol. B72, p. 184 (2000).
    • (2000) Mater. Sci. & Eng. , vol.B72 , pp. 184
    • Cho, N.-I.1    Sul, Y.2
  • 6
    • 0035500308 scopus 로고    scopus 로고
    • Chemical vapor deposition of copper film from hexafluoroacetyl-acetonate Cu(I) vinylcyclohexane
    • K.-K. Choi and S.-W. Rhee : “Chemical vapor deposition of copper film from hexafluoroacetyl-acetonate Cu(I) vinylcyclohexane”, Thin Solid Films, Vol. 397, p. 70 (2001).
    • (2001) Thin Solid Films , vol.397 , pp. 70
    • Choi, K.-K.1    Rhee, S.-W.2
  • 7
    • 0035545681 scopus 로고    scopus 로고
    • Enhancement of Cu nucleation in Cu-MOCVD by Pd sputtering pretreatment
    • J. Lim and C. Lee : “Enhancement of Cu nucleation in Cu-MOCVD by Pd sputtering pretreatment”, Solid-State Electron., Vol. 45, p. 2083 (2001).
    • (2001) Solid-State Electron. , vol.45 , pp. 2083
    • Lim, J.1    Lee, C.2
  • 8
    • 0029342655 scopus 로고
    • Long-throw low-pressure sputtering technology for vary large-scale integrated devices
    • N. Motegi, et al. : “Long-throw low-pressure sputtering technology for vary large-scale integrated devices”, J. Vac. Sci. Technol. B, Vol. 13, p. 1906 (1995).
    • (1995) J. Vac. Sci. Technol. B , vol.13 , pp. 1906
    • Motegi, N.1
  • 9
    • 0000914280 scopus 로고    scopus 로고
    • Ionized physical vapor disposition of Cu for high aspect ratio Damascene trench fill application
    • C. A. Nicols, S. M. Rossnage, and S. Hamaguchi : “Ionized physical vapor disposition of Cu for high aspect ratio Damascene trench fill application”, J. Vac. Sci. Technol. B, Vol. 14, p. 3270 (1996).
    • (1996) J. Vac. Sci. Technol. B , vol.14 , pp. 3270
    • Nicols, C.A.1    Rossnage, S.M.2    Hamaguchi, S.3
  • 10
    • 0000644202 scopus 로고    scopus 로고
    • Proc. of the Fifth International Workshop on Stress Induced Phenomena in Metallization
    • AIP Stuttgart, Germany
    • T. Koetter, H. Wendrock, H. Schloerb, M. Hecker, S. Menzel, and K. Wetzig : Proc. of the Fifth International Workshop on Stress Induced Phenomena in Metallization, Conference Proceedings, Vol. 491, AIP, p. 271, Stuttgart, Germany (1999-6).
    • (1999) Conference Proceedings , vol.491 , pp. 271
    • Koetter, T.1    Wendrock, H.2    Schloerb, H.3    Hecker, M.4    Menzel, S.5    Wetzig, K.6
  • 11
    • 0033350058 scopus 로고    scopus 로고
    • Deposition of droplet-free films by vacuum arc evaporation - Results and Applications
    • T. Witke and P. Siemroth : “Deposition of droplet-free films by vacuum arc evaporation - Results and Applications”, IEEE Trans. Plasma Sci., Vol. 27, p. 1039 (1999).
    • (1999) IEEE Trans. Plasma Sci. , vol.27 , pp. 1039
    • Witke, T.1    Siemroth, P.2
  • 12
    • 0034506770 scopus 로고    scopus 로고
    • Copper metallization in microelectronics using filtered vacuum arc deposition - principles and technological development
    • P. Siemroth and T. Schülke : “Copper metallization in microelectronics using filtered vacuum arc deposition - principles and technological development”, Surf. Coat. Technol., Vol. 133-134, p. 106 (2000).
    • (2000) Surf. Coat. Technol. , vol.133-134 , pp. 106
    • Siemroth, P.1    Schülke, T.2
  • 13
    • 0035509053 scopus 로고    scopus 로고
    • Filtered cathodic vacuum arc deposition of thin film copper
    • S. P. Lau, Y. H. Cheng, J. R. Shi, P. Cao, B. K. Tay, and X. Shi : “Filtered cathodic vacuum arc deposition of thin film copper”, Thin Solid Films, Vol. 398-399, p. 539 (2001).
    • (2001) Thin Solid Films , vol.398-399 , pp. 539
    • Lau, S.P.1    Cheng, Y.H.2    Shi, J.R.3    Cao, P.4    Tay, B.K.5    Shi, X.6
  • 14
    • 0036571139 scopus 로고    scopus 로고
    • Low-temperature deposited Cu electrode on chip inductors by abnormal glow discharge plasma with arc source
    • Y. Wang, H. Zhang, Q. Chen, J. Pan, and L. Li : “Low-temperature deposited Cu electrode on chip inductors by abnormal glow discharge plasma with arc source”, Mater. Lett., Vol. 54, p. 217 (2002).
    • (2002) Mater. Lett. , vol.54 , pp. 217
    • Wang, Y.1    Zhang, H.2    Chen, Q.3    Pan, J.4    Li, L.5
  • 15
    • 0032656082 scopus 로고    scopus 로고
    • Properties of titanium oxide film prepared by reactive cathodic vacuum arc deposition
    • H. Takikawa, T. Matsui, T. Sakakibara, A. Bendavid, and P. J. Martin : “Properties of titanium oxide film prepared by reactive cathodic vacuum arc deposition”, Thin Solid Films, Vol. 348, p. 145 (1999).
    • (1999) Thin Solid Films , vol.348 , pp. 145
    • Takikawa, H.1    Matsui, T.2    Sakakibara, T.3    Bendavid, A.4    Martin, P.J.5
  • 17
    • 0034502862 scopus 로고    scopus 로고
    • ZnO film formation using a steered and shielded reactive vacuum arc deposition
    • H. Takikawa, K. Kimura, R. Miyano, and T. Sakakibara : “ZnO film formation using a steered and shielded reactive vacuum arc deposition”, Thin Solid Films, Vol. 377-378, p. 74 (2000).
    • (2000) Thin Solid Films , vol.377-378 , pp. 74
    • Takikawa, H.1    Kimura, K.2    Miyano, R.3    Sakakibara, T.4
  • 18
    • 0034300631 scopus 로고    scopus 로고
    • Preparation of metal nitride and oxide thin films using shielded reactive vacuum arc deposition
    • R. Miyano, K. Kimura, K. Izumi, H. Takikawa, and T. Sakakibara : “Preparation of metal nitride and oxide thin films using shielded reactive vacuum arc deposition”, Vacuum, Vol. 59, p. 159 (2000).
    • (2000) Vacuum , vol.59 , pp. 159
    • Miyano, R.1    Kimura, K.2    Izumi, K.3    Takikawa, H.4    Sakakibara, T.5
  • 20
    • 85024444857 scopus 로고    scopus 로고
    • Development of shielded cathodic arc deposition with a superconductor shield
    • print
    • H. Takikawa, N. Miyakawa, and T. Sakakibara: “Development of shielded cathodic arc deposition with a superconductor shield”, Surf. Coat. Technol. (in print).
    • Surf. Coat. Technol.
    • Takikawa, H.1    Miyakawa, N.2    Sakakibara, T.3
  • 21
    • 0037472621 scopus 로고    scopus 로고
    • DLC thin film preparation by cathodic arc deposition with a super droplet-free system
    • H. Takikawa, K. Izumi, R. Miyano, amd T. Sakakibara : “DLC thin film preparation by cathodic arc deposition with a super droplet-free system”, Surf. Coat. Technol., Vol. 163-164, p. 368 (2003).
    • (2003) Surf. Coat. Technol. , vol.163-164 , pp. 368
    • Takikawa, H.1    Izumi, K.2    Miyano, R.3    Sakakibara, T.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.