Ionized physical vapor deposition of Cu for high aspect ratio damascene trench fill applications

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 5, 1996, Pages 3270-3275

  Nichols, C A ^a   Rossnagel, S M ^a   Hamaguchi, S ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000914280     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588819     Document Type: Article

References (14)

1. P. Doppelt and T. H. Baum, Mater. Res. Bull 41 (1994).
2. J. S. H. Cho, H. K. Kang, S. S. Wong, and Y. Shacham-Diamand, Mater. Res. Bull. 31 (1993).
3. D. Mikalsen and S. M. Rossnagel, US Patent No. 4,824,544 (April 1989).
4. S. M. Rossnagel, D. Mikalsen, H. Kinoshita, and J. J. Cuomo, J. Vac. Sci. Technol. A 9, 261 (1991).
5. S. M. Rossnagel and J. Hopwood, Appl. Phys. Lett. 63, 3285 (1993).
6. S. M. Rossnagel and J. Hopwood, J. Vac. Sci. Technol. B 12, 449 (1994).
7. P. F. Cheng, S. M. Rossnagel, and D. N. Ruzic, J. Vac. Sci. Technol. B 13, 203 (1995).
8. S. M. Rossnagel, Thin Solid Films 263, 1 (1995).
9. W. M. Holber, J. S. Logan, H. J. Grabarz, J. T. C. Yeh, J. B. O. Caughman, A. Sugarman, and F. E. Turene, J. Vac. Sci. Technol. A 11, 2903 (1993).
10. J. Hopwood and F. Qian, J. Appl. Phys. 78, 758 (1995).
11. S. Hamaguchi and S. M. Rossnagel, J. Vac. Sci. Technol. B 13, 183 (1995).
12. S. M. Rossnagel, J. Vac. Sci. Technol. A 6, 19 (1988).
13. J. Hopwood, C. R. Guarnieri, S. J. Whitehair, and J. J. Cuomo, J. Vac. Sci. Technol. A 11, 152 (1993).
14. J. H. Keller, J. C. Forster, and M. S. Barnes, J. Vac. Sci. Technol. A 11, 2487 (1993).