Epitaxial graphene field effect transistors on silicon substrates

ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

Volumn , Issue , 2009, Pages 189-192

  Kang, Hyun Chul ^a   Karasawa, Hiromi ^a   Miyamoto, Yu ^a   Handa, Hiroyuki ^a   Suemitsu, Tetsuya ^a,b   Suemitsu, Maki ^a,b   Otsuji, Taiichi ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BACK-GATE; CHANNEL CURRENTS; CHANNEL TRANSISTORS; DRAIN SATURATION CURRENT; EPITAXIAL GRAPHENE; GATE INSULATOR; GATE VOLTAGES; GATE-LEAKAGE CURRENT; GRAPHENES; SAMPLE SURFACE; SI SUBSTRATES; SIC SUBSTRATES; SILICON SUBSTRATES;

DRAIN CURRENT; GRAPHITE; LEAKAGE CURRENTS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SUBSTRATES; ULTRAHIGH VACUUM;

FIELD EFFECT TRANSISTORS;

EID: 72849140918     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2009.5331308     Document Type: Conference Paper

References (7)

1. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, A. A. Firsov, "Electric field effect in atomically thin carbon films," Science, vol. 306, pp. 666, 2004.
2. W. A. de Heer, C. Berger, E. Conrad, P. First, R. Murali, J. Meindl, "Pionics: the emerging science and technology of graphene-based nanoelectronics," Int. Electron Devices Meeting, pp. 199-202, 2007.
3. Z. Chen and P. Avouris, "Semiconducting graphene ribbon transistor," Device Researc Conf., pp. 265-266, 2007.
4. th Int. Conf. on Solid Films and Surfaces, Dublin, Jun. 30, 2008; will be published on e-J, Surf. Sci. Nanotech.
5. H. Nakazawa and M. Suemitsu, "Formation of quasi-single-domain 3C-SiC on nominally on-axis Si(001) substrate using organosilane buffer layer," J. Appl. Phys. vol. 93, pp. 5282-5286, 2003.
6. Z. H. Ni, W. Chen, X. F. Fan, J. L. Kuo, T. Yu, A. T. S. Wee, Z. X. Shen, "Raman spectroscopy of epitaxial graphene on a SiC substrate," Phys. Rev. vol. B 77, pp. 115416,2008.
7. D. R. Greenberg, J. A. del Alamo, "Nonlinear source and drain resistance in recessed-gate heterostructure field-effect transistors," IEEE Trans. Electron Devices, vol. 43, pp. 1304-1306, 1996.