Long time data retention and a mechanism in ferroelectric-gate field effect transistors with HfO2 buffer layer

Materials Research Society Symposium Proceedings

Volumn 830, Issue , 2005, Pages 113-118

  Aizawa, Koji ^a   Kawashima, Yoshihito ^a   Ishiwara, Hiroshi ^a  

^a Tokyo Institute of Technology ^*  (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; ELECTRIC CHARGE; ELECTRIC POTENTIAL; FERROELECTRIC DEVICES; FERROELECTRIC THIN FILMS; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; PERMITTIVITY; SILICON NITRIDE;

CHARGE DENSITY; DATA RETENTION; METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR (MFIS) STRUCTURES; SEMICONDUCTOR SUBSTRATES;

GATES (TRANSISTOR);

EID: 20344382497     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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