Ferroelectric DRAM (FEDRAM) FET with metal/SrBi 2Ta 2O 9/SiN/Si gate structure

IEEE Electron Device Letters

Volumn 23, Issue 2, 2002, Pages 82-84

  Kim, Kwang Ho ^a,b,c   Han, Jin Ping ^a,b   Jung, Soon Won ^c   Ma, Tso Ping ^a,b  

^a IEEE   (United States)

^b Yale University   (United States)

^c Chongju University   (South Korea)

Author keywords

Ferroelectric dynamic random access memory (FEDRAM) FET; Retention; SiN buffer; SrBi 2Ta 2O 9; Switching

Indexed keywords

FERROELECTRIC DYNAMIC RANDOM ACCESS MEMORY; METAL FERROELECTRIC INSULATOR SEMICONDUCTOR; METAL FERROELECTRIC METAL STRUCTURES; PEAK TO PEAK VOLTAGE; PULSE SEQUENCE; REMNANT POLARIZATION; RETENTION; STRESS INDUCE LEAKAGE CURRENT; SWITCHING CYCLES; SWITCHING TIME;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELDS; FATIGUE OF MATERIALS; FERROELECTRIC DEVICES; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; PERMITTIVITY; POLARIZATION; SEMICONDUCTING BISMUTH COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON NITRIDE; SWITCHING;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 0036477686     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.981313     Document Type: Article

References (15)

1. A new solid state resistor
2. A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor
3. Nonvolatile memory operations of metal-ferroelectric-insulator-semiconductor (MFIS) FET's using PLZT/STO/Si (100) structures
4. 3/Si (100) structures for nonvolatile memory operation
5. Ferroelectric-gate transistor as a capacitor-less DRAM cell
6. A ferroelectric dynamic random access memory
7. 9 on Si
8. Making silicon nitride film a viable gate dielectric
9. 9 memory capacitor on Si with a silicon nitride buffer
10. Switching kinetics of lead zirconate titanate submicron thin-film memories
11. 9
12. 9 films and ultra-thin SiN buffer layers
13. The physics of ferroelectric ceramic thin films for memory applications
14. 3 thin films: A first principles approach
15. 9/Pt films