Simulation of pattern effect induced by millisecond annealing used in advanced metal-oxide-semiconductor technologies

Journal of Applied Physics

Volumn 108, Issue 1, 2010, Pages

  Cacho, F ^a   Bono, H ^b   Beneyton, R ^a   Dumont, B ^a   Colin, A ^a   Morin, P ^a  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTIVITIES; ANNEALING PROCESS; ANNEALING TEMPERATURES; CIRCUIT DESIGNS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DESIGN INPUT; DOWN-SCALING; ELECTRICAL PROPERTY; FINITE ELEMENT METHOD SIMULATION; LOCAL VARIATIONS; METAL-OXIDE-SEMICONDUCTOR TECHNOLOGY; MILLISECOND ANNEALING; MULTIPHYSICS SIMULATIONS; NON-UNIFORMITIES; NONUNIFORM; OPTICAL AND THERMAL PROPERTIES; OPTICAL MODELING; PATTERN EFFECT; PATTERNED STRUCTURE; REAL SYSTEMS; THERMAL DISPERSION; THERMAL PROPERTIES; THERMAL SIMULATIONS; TIME-SCALES; TRANSIENT TEMPERATURE FIELDS;

COMPUTER SIMULATION; DISPERSIONS; ELECTRIC PROPERTIES; FINITE ELEMENT METHOD; INTEGRATED CIRCUIT MANUFACTURE; METAL ANALYSIS; OPTICAL PROPERTIES; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTOR DEVICE MANUFACTURE; THERMODYNAMIC PROPERTIES;

SIMULATED ANNEALING;

EID: 77955180619     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3452385     Document Type: Article

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