Temperature and doping dependence of the radiative properties of silicon: Drude model revisited

13th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2005

Volumn , Issue , 2005, Pages 251-260

  Lee, B J ^a   Zhang, Z M ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; CIVIL AVIATION; CRYSTALS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; FUNCTIONS; INTERNET PROTOCOLS; NONMETALS; OPTICAL CONSTANTS; PROBABILITY DENSITY FUNCTION; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; SILICON WAFERS;

AB SORPTION COEFFICIENTS; ACCURATE MEASUREMENTS; CARRIER ABSORPTIONS; CARRIER SCATTERINGS; COMPLICATED FUNCTIONS; DIELECTRIC FUNCTIONS; DOPANT CONCENTRATIONS; DOPED SILICONS; DOPING DEPENDENCES; DRUDE MODELS; EXPERIMENTAL DATUMS; MEASURED DATUMS; RADIATIVE PROPERTIES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 48349084094     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2005.1613717     Document Type: Conference Paper

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